Vertical Cavity Surface Emitting Laser (VCSEL) arrays with vias for electrical connection are disclosed. A Vertical Cavity Surface Emitting Laser (VCSEL) array in accordance with one or more embodiments of the present invention comprises a plurality of first mirrors, a plurality of second mirrors, a plurality of active regions, coupled between the plurality of first …

Legal parties

Inventors (applicants): Michael MacDougal, Chad Shin-deh Wang, Jonathan C. Geske
Assignees (initial): Flir Systems, Inc. (Wilsonville, US)
Agents: Haynes and Boone, LLP (attorney)

The application was examined by Delma R Forde, Jessica Stultz (USPTO dept. 2828)


  • 1. A Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising: …
  • 2. The VCSEL array of claim 1 , further comprising a plurality of electrical contacts …
  • 3. The VCSEL array of claim 2 , wherein the plurality of electrical contacts are annealed. …

Cited documents


  • DeFranza et al. US 2007/0217471 A1 / 372/50.12, Sep. 1, 2007
  • Masui et al. US 8102890 B2 / 372/45.01, Jan. 1, 2012
  • Lewis et al. US 2006/0109883 A1 / 372/50.12, May. 1, 2006


Brief Description of the Drawings

Referring now to the drawings in which like reference numbers represent corresponding parts throughout: FIG. 1 illustrates a vertical-cavity surface emitting laser structure of the related art; …


Background of the Invention

1. Field of the Invention This invention relates generally to materials integration, hybridization, thermal management, and processing techniques of high-power vertical-cavity surface emitting laser arrays. 2. Description of the Related …

Detailed Description of the Preferred Embodiments

In the following description, reference is made to the accompanying drawings which form a part hereof, and which is shown, by way of illustration, several embodiments of the present invention. …


The invention described above can be applied to virtually any semiconductor material or group of material, using adjustments to processing recipes and masking layers for the epi and substrate-side well-known …

More details about Serially Interconnected Vertical-Cavity Surface Emitting Laser Arrays

Miscellaneous patent data

Numbered 12/868,591 (application), the patent particularly claims a Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising…, the protection scope is defined by 8 claims, the recorded agent's company is Haynes and Boone, LLP, the invention description is illustrated by 10 drawings, the patent extension term is 424 days, the grant publication number is 08654811, 10 figures depict the invention details, the invention is named Serially Interconnected Vertical-Cavity Surface Emitting Laser Arrays, similar classification categories are strained layer, in multi-section lasers, Insulating crystal, having a travelling wave passing through the active medium, in AIIBVI compounds, e.g. ZnCdSe-laser, Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering or replenishing, Means for circulating the gas, e.g. for equalising the pressure within the tube, Inductive or capactive excitation, Control of pulse characteristics, means for controlling gas flow, Stabilisation of laser output parameters, the patent was granted on Feb. 18, 2014, the claim number 1 is selected as exemplary, the assignee location is Wilsonville (US); its company is Flir Systems, Inc., assigned to a United States company, the inventor's address - Ventura, CA, the recorded inventor's name is Jonathan C. Geske, includes the following drawings: vertical-cavity surface emitting laser structure, Serially Interconnected Vertical-Cavity Surface Emitting, example bottom-emitting VCSEL of the related, VCSEL structure as used in one or more, the applicant's address - Santa Barbara, CA, the recorded applicant's name is Wang Chad Shin-deh, the application publication date is Aug. 25, 2010, developed by Jonathan C. Geske et al., categorized under With vertical output (surface emission) as a primary classification, the application was examined by Jessica Stultz, the assistant Delma R Forde (2828 USPTO department).

Invention classification information

The invention is classified under With vertical output (surface emission), Semiconductor, Multiple wavelength emissive, Independently addressable, Semiconductor lasers, Laser array, Monolithic integrated. The designated search classifications include Monolithic integrated, Semiconductor.

Patent details
Publication number 08654811
Publication date Feb. 18, 2014
Kind code B2
Application number 12/868,591
Application date Aug. 25, 2010
Application type U
Application series code 12
Extension term 424
National classification 372/50.124
Total number of claims 8
Exemplary claims 1
Number of drawings 10
Number of figures 10
Quick navigation
More similar inventions

Laser Diode Drive Circuit (US08755419, June 17, 2014 / 12/868,182, Aug. 25, 2010, Power supply), Tomohiko Kamatani / Ricoh Company, Ltd. (Tokyo, JP)

Driver Circuit of Light-Emitting Element (US08665922, March 4, 2014 / 12/607,754, Oct. 28, 2009, Controlling current or voltage to laser), Yoshio Fujimura et al. / Sanyo Electric Co., Ltd. (Moriguchi-shi, Osaka, JP)

Laser Chip Package Structure (US08553742, Oct. 8, 2013 / 13/757,008, Feb. 1, 2013, Mirror support or alignment structure), Kai-Wen Wu / Hon Hai Precision Industry Co., Ltd. (New Taipei, TW)

Also viewed with this patent

Light Emitting Device and Method of Controlling Light Emitting Device (US08654803, Feb. 18, 2014 / 13/646,748, Oct. 8, 2012, Particular Temperature Control), Akinori Hayakawa / Fujitsu Limited (Kawasaki, JP)

Light Source Device, Analysis Device, and Light Generation Method (US08654801, Feb. 18, 2014 / 13/861,576, April 12, 2013, Tuning), Masanori Oto / Fuji Electric Co., Ltd. JP

Quantum Cascade Laser (US08654809, Feb. 18, 2014 / 12/782,255, May 18, 2010, Particular current control structure), Masamichi Yamanishi et al. / Hamamatsu Photonics K.K. (Hamamatsu-shi, Shizuoka, JP)

New documents
  • Process for the Production of the Actinobacillus Pleuropneumoniae Toxins APXI or APXIII in a Liquid Culture Medium Under Supply of Air Enriched in Carbon Dioxide
  • Method for Manufacturing Nonvolatile Memory Device
  • Supply Chain Demand Satisfaction
  • Supply-Line Management Device
  • Storage Control Device and Method for Managing Snapshot