Abstract

A semiconductor laser element includes a laminate composed of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and a second embedded layer that is in contact with the second conductivity type semiconductor layer, has a stripe-like groove parallel to the cavity direction, and is composed of an insulator …

Legal parties

Party
Inventors (applicants): Shingo Masui, Shinya Sonobe
Assignees (initial): Nichia Corporation (Anan-shi, JP)
Agents: Global IP Counselors, LLP (attorney)

The application was examined by Michael Carter, Jessica Stultz (USPTO dept. 2828)

Claims

  • 1. A semiconductor laser element comprising: …
  • 2. The semiconductor laser element according to claim 1 , wherein the first conductivity type …
  • 3. The semiconductor laser element according to claim 1 , wherein the first embedded layer …

International priority data

JP: 2008-203019 / Aug. 6, 2008 (national)
JP: 2007-290590 / Nov. 8, 2007 (national)

Cited documents

Patents

  • JP 2003-332244 A, Nov. 1, 2003
  • JP 02-058288 A, Feb. 1, 1990
  • Yamamura et al. US 2002/0159492 A1 / 372/46, Oct. 1, 2002
  • JP 2006-041491 A, Feb. 1, 2006
  • JP 2005-175056 A, Jun. 1, 2005
  • JP 2000-068593 A, Mar. 1, 2000
  • Kneissl et al. US 2004/0184497 A1, Sep. 1, 2004
  • Fukunaga US 2002/0015428 A1 / 372/46, Feb. 1, 2002
  • JP 2002-164617 A, Jun. 1, 2002
  • JP 2004-158500 A, Jun. 1, 2004
  • JP 2007-184644 A, Jul. 1, 2007
  • Hashimoto US 2005/0232314 A1, Oct. 1, 2005
  • Ueda et al. US 2008/0008220 A1, Jan. 1, 2008
  • JP 2004-289157 A, Oct. 1, 2004
  • JP 2007-129236 A, May. 1, 2007
  • JP 2003-264335 A, Sep. 1, 2003
  • Ha et al. US 2007/0098030 A1 / 372/43.01, May. 1, 2007
  • Mochida US 2005/0281304 A1 / 372/46.01, Dec. 1, 2005
  • Meyers US 5070509 A / 372/45.01, Dec. 1, 1991
  • Schmidt et al. US 2005/0030998 A1 / 372/46, Feb. 1, 2005
  • Yu et al. US 6373875 B1, Apr. 1, 2002
  • Ueda et al. US 2005/0279994 A1, Dec. 1, 2005
  • JP 2004-146527 A, May. 1, 2004

Brief Description of the Drawings

FIG. 1 a is a perspective view, FIG. 1 b is a front view, FIG. 1 c is a plan view and FIG. 1 …

Description

Cross-Reference to Related Applications

This national phase application claims priority to Japanese Patent Application No. 2007-290590 filed on Nov. 8, 2007 and Japanese Patent Application No. 2008-203019 filed on Aug. 6, 2008. The entire …

Detailed Description of the Preferred Embodiments

A semiconductor laser element of the present invention is composed of a laminate comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. …

Example 1

With the semiconductor laser element in this example, as shown in FIGS. 1 a to 1 d , an n-type semiconductor layer, an active layer 5, and a p-type semiconductor …

More details about Semiconductor Laser Element

Miscellaneous patent data

Illustrated by 13 drawings, invented by Shingo Masui et al., the published applicant's name is Shingo Masui, claims 1-26 comprise the invention scope, was examined by Michael Carter, the assistant, Jessica Stultz, the main examiner (2828 USPTO department), the published inventor's name is Masui Shingo, the assignee organization is Nichia Corporation, located in Anan-shi (JP), particularly claims a semiconductor laser element comprising…, categorized under Particular current control structure as a primary classification, similar documents are classified under in gas lasers, Raman Laser, in gas lasers, Distributed Bragg reflector lasers, Summary Reference, using optical pumping, in multi-section lasers, Chelate, Long Wavelength, Having feedback circuitry, assigned to a foreign company or corporation, the application publication date is Oct. 31, 2008, the term of the patent was extended by 35 days, the grant date is Oct. 1, 2013 (publication date), the grant number is 08548023 (publication number), the invention is named Semiconductor Laser Element, the claim 1 is exemplary as chosen by the examiner, the exemplary patent drawings are Semiconductor Laser Element, perspective view, FIG. 1 b is a front, perspective view, FIG. 2 b is a front, b are plan views showing, explained by 57 figures, the known agent's company name - Global IP Counselors, LLP, the application number is 12/742,075 (U.S.).

Invention classification information

The invention is classified under having a grooved structure, e.g. V-grooved, Particular current control structure, Window, aperture, and mask, Structure or shape of the semiconductor body to guide the optical wave, Channeled substrate, Absorption type, Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface. The designated search classifications include Window, aperture, and mask, Channeled substrate, Particular current control structure, Absorption type.

Patent details
Publication number 08548023
Publication date Oct. 1, 2013
Kind code B2
Application number 12/742,075
Application date Oct. 31, 2008
Application type U
Application series code 12
Int. pub. country WO
Int. pub. number WO2009/060802
Int. publication May. 14, 2009
Int. filing country WO
Int. filing PCT/JP2008/069914
Filed internationally Oct. 31, 2008
National stage date May. 7, 2010
Extension term 35
National classification 372/46.01
Total number of claims 26
Exemplary claims 1
Number of drawings 13
Number of figures 57
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