Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having …

Legal parties

Inventors (applicants): Jin Hong Lee, Ho Sang Kwack, Dae Kon Oh, Jin Soo Kim, Sung Ui Hong
Assignees (initial): Electronics and Telecommunications Research Institute (Daejeon, KR)
Agents: NSIP Law (attorney)

The application was examined by Xinning Niu (USPTO dept. 2828)


  • 1. A semiconductor laser diode comprising: …
  • 2. The semiconductor laser diode according to claim 1 , further comprising an additional optical …
  • 3. The semiconductor laser diode according to claim 1 , wherein the upper and lower …

International priority data

KR: 10-2005-0043466 / May. 24, 2005 (national)
KR: 10-2004-0105818 / Dec. 14, 2004 (national)

Cited documents


  • KR 10-0159015, Aug. 1, 1998
  • Haase et al. US 2003/0007535 A1 / 372/50, Jan. 1, 2003
  • Iwamoto et al. US 2002/0034204 A1 / 372/46, Mar. 1, 2002
  • Irikawa US 5521935 A / 372/45.011, May. 1, 1996
  • Sun US 6044098 A / 372/46.013, Mar. 1, 2000
  • KR 10-034331, Jun. 1, 2002
  • Cohen US 5615224 A / 372/36, Mar. 1, 1997
  • Niina et al. US 4607369 A / 372/46.01, Aug. 1, 1986
  • KR 0159015, Aug. 1, 1998
  • Stintz et al. US 2002/0114367 A1 / 372/45, Aug. 1, 2002
  • Haase et al. US 6873638 B2, Mar. 1, 2005
  • Nomoto et al. US 2003/0165169 A1 / 372/46, Sep. 1, 2003
  • KR 10-0343311, Jun. 1, 2002


Brief Description of the Drawings

The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof …


CROSS-REFERENCE TO RELATED <span Class="deleted-info">APPLICATION</Span> <span Class="inserted-Info">PATENT APPLICATIONS</span>

This application claims priority to and is for a reissue of U.S. Pat. No. 7,508,857, issued on Mar. 24, 2009, from application Ser. No. 11/265,712, filed on Nov. 2, 2005 …

Detailed Description of Exemplary Embodiments

The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied …

More details about Semiconductor Laser Diode and Method of Manufacturing the Same

Miscellaneous patent data

The claim 10 is exemplary as chosen by the examiner, particularly claims a semiconductor laser diode comprising…, the grant date is Aug. 12, 2014 (publication date), the exemplary patent drawings are cross-sectional views illustrating a method, Semiconductor Laser Diode and Method, assigned to a foreign company or corporation, located in Daejeon (KR), the assignee organization is Electronics and Telecommunications Research Institute, the invention is named Semiconductor Laser Diode and Method of Manufacturing the Same, the application was examined by Xinning Niu (2828 USPTO department), explained by 4 figures, categorized under Particular current control structure as a primary classification, invented by Jin Hong Lee et al., the grant number is RE045071 (publication number), the application publication date is Mar. 24, 2011, similar documents are classified under Waveguide lasers, e.g. laser amplifiers, controlling the mutual position or the reflecting properties of the reflectors of the cavity, Discharge tube feature, Structural details or components not essential to laser action, Monolithic integrated, Cavity, Having lens, Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds, Particular confinement layer, liquid, the application number is 13/070,906 (U.S.), claims 1-36 comprise the invention scope, illustrated by 2 drawings, the recorded agent's company is NSIP Law, the recorded inventor's name is Kim Jin Soo, the applicant's name is Sung Ui Hong.

Invention classification information

The invention is classified under Particular current control structure, Having oxidized region, Particular confinement layer, Semiconductor, having a ridge or a stripe structure. The designated search classifications include Particular current control structure.

Patent details
Publication number RE045071
Publication date Aug. 12, 2014
Kind code E1
Application number 13/070,906
Application date Mar. 24, 2011
Application type R
Application series code 13
National classification 372/46.01
Total number of claims 36
Exemplary claims 10
Number of drawings 2
Number of figures 4
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