A semiconductor laser device includes a substrate, ridge stripes on the substrate and separated by separation sections, a top surface electrode continuously extending over the ridge stripes, and a bottom surface electrode on a bottom surface of the substrate. Each of the ridge stripes includes a lower cladding layer on the substrate, an active layer …

Legal parties

Inventors (applicants): Takashi Motoda
Assignees (initial): Mitsubishi Electric Corporation (Tokyo, JP)
Agents: Leydig, Voit & Mayer, Ltd. (attorney)

The application was examined by Tuan Nguyen (USPTO dept. 2828)


  • 1. A semiconductor laser device comprising: …
  • 2. The semiconductor laser device according to claim 1 , wherein each of said separation …
  • 3. A semiconductor laser comprising: …

International priority data

JP: 2012-060365 / Mar. 16, 2012 (national)

Cited documents


  • Yamada et al. US 2007/0025406 A1 / 372/50.121, Feb. 1, 2007
  • JP 2003-31905, Jan. 1, 2003
  • JP 2003-31905 A, Jan. 1, 2003
  • JP 2-39583 A, Feb. 1, 1990
  • Kuwata et al. US 7700955 B2 / 257/79, Apr. 1, 2010
  • JP 2008-130664 A, Jun. 1, 2008
  • Shigihara et al. US 2007/0009001 A1, Jan. 1, 2007
  • Hata et al. US 2010/0284433 A1 / 372/45.011, Nov. 1, 2010
  • Inenaga US 2008/0317082 A1, Dec. 1, 2008
  • JP 3-76188 A, Apr. 1, 1991
  • JP 2004-233885 A, Aug. 1, 2004
  • JP 2007-49109 A, Feb. 1, 2007
  • JP 2009-4473 A, Jan. 1, 2009
  • Thornton US 4870652 A, Sep. 1, 1989
  • Nakashima et al. US 2010/0329295 A1 / 372/46.012, Dec. 1, 2010
  • Masui et al. US 8022424 B2 / 257/98, Sep. 1, 2011

Brief Description of the Drawings

FIG. 1 is an elevational view of a semiconductor laser device in accordance with a first embodiment of the present invention; FIG. 2 is a cross-sectional view taken along dashed …


Background of the Invention

1. Field of the Invention The present invention relates to a semiconductor laser device, a method of manufacturing a semiconductor laser device, and a semiconductor laser array for use …

First Embodiment

FIG. 1 is an elevational view of a semiconductor laser device in accordance with a first embodiment of the present invention. The semiconductor laser device 10 includes a substrate 12. A plurality …

Second Embodiment

The following description of a semiconductor laser device in accordance with a second embodiment of the present invention will be primarily limited to the differences from the semiconductor laser device …

More details about Semiconductor Laser Device, Method of Manufacturing Semiconductor Laser Device, and Semiconductor Laser Array

Miscellaneous patent data

The grant publication number is 08855161, the inventor's name is Motoda Takashi, the invention is named Semiconductor Laser Device, Method of Manufacturing Semiconductor Laser Device, and Semiconductor Laser Array, the examination was conducted by Tuan Nguyen (2828 USPTO department), the application publication date is Jan. 24, 2013, developed by Takashi Motoda, includes the following drawings: Cross-sectional view taken along dashed, Elevational view of a semiconductor, Semiconductor Laser Device, Method of Manufacturing, Cross-sectional view taken along dashed, categorized under With vertical output (surface emission) as a primary classification, 15 figures depict the invention details, the invention description is illustrated by 9 drawings, the patent extension term is 45 days, assigned to a foreign company or corporation, the protection scope is defined by 6 claims, the claim number 1 is selected as exemplary, numbered 13/748,664 (application), similar classification categories are Having particular beam control circuit component, a semiconductor laser, e.g. of a laser diode, Optical devices within, or forming part of, the tube, e.g. windows, mirrors, Electrodes, e.g. special shape, configuration or composition, Frequency multiplying, e.g. harmonic generation, Controlling current or voltage, Constructional details, Disordered region, Pulse, Fibre lasers, Amplifier structures not provided for in groups H01S 5/02-H01S 5/30, high energy nuclear particles, Masers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves, Free Electron Laser, the active gas being polyatomic, i.e. containing more than one atom, the published applicant's name is Motoda Takashi, the patent was granted on Oct. 7, 2014, the patent particularly claims a semiconductor laser device comprising…, the recorded agent's company name - Leydig, Voit & Mayer, Ltd., the assignee location is Tokyo (JP); its company is Mitsubishi Electric Corporation.

Invention classification information

The invention is classified under With vertical output (surface emission), Semiconductor lasers. The designated search classifications include Laser array, Nonlinear device, With vertical output (surface emission), Arrays of surface emitting lasers, Multiple wavelength emissive, Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30, Active media with particular shape.

Patent details
Publication number 08855161
Publication date Oct. 7, 2014
Kind code B2
Application number 13/748,664
Application date Jan. 24, 2013
Application type U
Application series code 13
Extension term 45
National classification 372/50.124
Total number of claims 6
Exemplary claims 1
Number of drawings 9
Number of figures 15
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