Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side …

Legal parties

Inventors (applicants): Akira Ariyoshi, Toshiyuki Kawakami
Assignees (initial): Sharp Kabushiki Kaisha (Osaka, JP)
Agents: Harness, Dickey & Pierce, P.L.C. (attorney)

The application was examined by Xinning Niu (USPTO dept. 2828)


  • 1. A semiconductor laser chip, comprising: …
  • 2. A semiconductor laser chip according to claim 1 , further comprising side faces …
  • 3. A semiconductor laser chip according to claim 2 , …

International priority data

JP: 2009-276555 / Dec. 4, 2009 (national)

Cited documents


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  • Hanaoka US 2004/0013149 A1 / 372/46, Jan. 1, 2004
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  • JP 2007-042857, Feb. 1, 2007
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  • Tatsumi US 2005/0069006 A1 / 372/50, Mar. 1, 2005

Brief Description of the Drawings

FIG. 1 is a perspective view of a semiconductor laser chip according to a first embodiment of the present invention. FIG. 2 is a perspective view of the semiconductor laser …


Background of the Invention

1. Field of the Invention The present invention relates to a semiconductor laser chip, a semiconductor laser device, and a semiconductor laser chip manufacturing method. 2. Description of Related Art Nitride …

Detailed Description of Preferred Embodiments

Before concrete embodiments of the present invention are described, findings made by the inventors of the subject application through various studies are discussed. The inventors of the subject application first …

More details about Semiconductor Laser Chip, Semiconductor Laser Device, and Semiconductor Laser Chip Manufacturing Method

Miscellaneous patent data

The invention is named Semiconductor Laser Chip, Semiconductor Laser Device, and Semiconductor Laser Chip Manufacturing Method, the exemplary patent drawings are Semiconductor Laser Chip, Semiconductor Laser, Perspective view of the semiconductor, Perspective view of a semiconductor, Plan view of the semiconductor, claims 1-15 comprise the invention scope, the claim 1 is exemplary as chosen by the examiner, the application publication date is Dec. 2, 2010, invented by Akira Ariyoshi et al., the recorded inventor's name is Ariyoshi Akira, explained by 40 figures, the application number is 12/926,660 (U.S.), the grant date is Oct. 14, 2014 (publication date), the application was examined by Xinning Niu (2828 USPTO department), the assignee location is Osaka (JP); its organization is Sharp Kabushiki Kaisha, the known applicant's name is Kawakami Toshiyuki, assigned to a foreign company or corporation, the grant number is 08861561 (publication number), particularly claims a semiconductor laser chip, comprising…, illustrated by 21 drawings, the known agent's company name - Harness, Dickey & Pierce, P.L.C., similar documents are classified under Optical devices within, or forming part of, the tube, e.g. windows, mirrors, Nano-optics, e.g. quantum optics or photonic crystals, Nano-biotechnology or nano-medicine, e.g. protein engineering or drug delivery, Short Wavelength Laser, Superradiant Laser, using a mechanical device, Having a ring configuration, varying the potential of the electrodes, Cavity, using scattering effects, e.g. stimulated Brillouin or Raman effects, coherent light, Methods or apparatus for measurement or analysis of nano-structures, Nano-technology for materials or surface science, e.g. nano-composites, Dye, Subject matter not provided for in other groups of this subclass, the term of the patent was extended by 563 days, categorized under Particular current control structure as a primary classification.

Invention classification information

The invention is classified under Semiconductor, Mountings, Housings, Nano-optics, e.g. quantum optics or photonic crystals, Structural details or components not essential to laser action, Cooling arrangements, Particular Temperature Control, Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface, in AIIIBV compounds, e.g. AlGaAs-laser, Particular current control structure, having a ridge or a stripe structure, Electrical excitation. The designated search classifications include Semiconductor, Particular current control structure.

Patent details
Publication number 08861561
Publication date Oct. 14, 2014
Kind code B2
Application number 12/926,660
Application date Dec. 2, 2010
Application type U
Application series code 12
Extension term 563
National classification 372/46.01
Total number of claims 15
Exemplary claims 1
Number of drawings 21
Number of figures 40
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