A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes …

Legal parties

Inventors (applicants): Aihiko Numata
Assignees (initial): Canon Kabushiki Kaisha (Tokyo, JP)
Agents: Fitzpatrick, Cella, Harper & Scinto (attorney)

The application was examined by Xinning Niu (USPTO dept. 2828)


  • 1. A surface emitting laser, comprising: …
  • 2. The surface emitting laser according to claim 1 , wherein a band gap of said …
  • 3. The surface emitting laser according to claim 1 , wherein said third p-type semiconductor …

International priority data

JP: 2011-137481 / Jun. 21, 2011 (national)

Cited documents


  • JP 2000-091705, Mar. 1, 2000
  • JP 2008-098379, Apr. 1, 2008
  • JP 2006-165255, Jun. 1, 2006
  • Hori US 2007/0201526 A1 / 372/50.124, Aug. 1, 2007
  • Takakura et al. US 2010/0002738 A1 / 372/44.011, Jan. 1, 2010
  • Hoshino et al. US 2011/0134941 A1 / 372/7, Jun. 1, 2011
  • Meuleman et al. US 4677634 A / 372/46.01, Jun. 1, 1987
  • Numata US 7796660 B2 / 372/39, Sep. 1, 2010
  • JP 2008-227095, Sep. 1, 2008

Brief Description of the Drawings

FIG. 1 is a schematic view illustrating a structural example of a photonic crystal surface emitting laser according to an embodiment and an example of the present invention. FIGS. 2A and 2B are …


Background of the Invention

1. Field of the Invention The present invention relates to a photonic crystal surface emitting laser and a method of manufacturing the same. 2. Description of the Related Art In recent …

Description of the Embodiments

Hereinafter, an embodiment of the present invention is …


As the embodiment of the present invention, there is described a structural example of a photonic crystal surface emitting laser in which at least an n-type cladding layer, an active …

More details about Photonic Crystal Surface Emitting Laser and Method of Manufacturing the Same

Miscellaneous patent data

Located in Tokyo (JP), the assignee organization is Canon Kabushiki Kaisha, similar classification categories are Feedback circuitry, Plural Q-switches, Semiconductor, Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted, Particular Active Media, Construction or shape of the optical resonator, controlling the active medium, e.g. by controlling the processes or apparatus for excitation, Pump cavity, Electrodes, e.g. special shape, configuration or composition, Unstable resonator, includes the following drawings: Photonic Crystal Surface Emitting Laser, graphs showing the photonic crystal, Schematic view illustrating a structural, Table showing a layer structure, the patent was granted on Apr. 15, 2014, the invention is named Photonic Crystal Surface Emitting Laser and Method of Manufacturing the Same, the published applicant's name is Aihiko Numata, the patent particularly claims a surface emitting laser, comprising…, numbered 13/482,025 (application), the protection scope is defined by 18 claims, assigned to a foreign company or corporation, the recorded inventor's name is Numata Aihiko, the application publication date is May. 29, 2012, an application examiner - Xinning Niu (2828 USPTO department), categorized under With vertical output (surface emission) as a primary classification, the recorded agent's company name - Fitzpatrick, Cella, Harper & Scinto, the invention description is illustrated by 18 drawings, the grant publication number is 08699539, 31 figures depict the invention details, the claim number 1 is selected as exemplary, developed by Aihiko Numata.

Invention classification information

The invention is classified under having a vertical cavity, Particular confinement layer, With vertical output (surface emission). The designated search classifications include With vertical output (surface emission).

Patent details
Publication number 08699539
Publication date Apr. 15, 2014
Kind code B2
Application number 13/482,025
Application date May. 29, 2012
Application type U
Application series code 13
National classification 372/50.124
Total number of claims 18
Exemplary claims 1
Number of drawings 18
Number of figures 31
Quick navigation
More similar inventions

YB: And ND: Mode-Locked Oscilltors and Fiber Systems Incorporated in Solid-State Short Pulse Laser Systems (US08855151, Oct. 7, 2014 / 13/935,679, July 5, 2013, Control of pulse characteristics), Salvatore F. Nati et al. / Imra America, Inc. (Ann Arbor, US)

Ultraviolet Fiber Laser System (US08817827, Aug. 26, 2014 / 13/888,279, May 6, 2013, Short Wavelength Laser), Valeri V. Ter-Mikirtychev / Veralas, Inc. (Mountain View, US)

Photonic Devices Based on Conical Refraction (US08542712, Sept. 24, 2013 / 13/145,736, Jan. 21, 2010, Active media with particular shape), Todor Kalkandjiev et al. / University of Dundee (Nethergate, Dunkee, GB)

Also viewed with this patent

System and Method for High Accuracy Gas Inject in a Two Chamber Gas Discharge Laser System (US08681832, March 25, 2014 / 13/251,181, Sept. 30, 2011, Gas maintenance), Daniel J. Riggs / Cymer, Inc. (San Diego, US)

Quantum Cascade Laser (US08699538, April 15, 2014 / 13/297,588, Nov. 16, 2011, With superlattice structure), Masamichi Yamanishi et al. / Hamamatsu Photonics K.K. (Hamamatsu-shi, Shizuoka, JP)

Light Generating System and Method (US08693513, April 8, 2014 / 13/272,277, Oct. 13, 2011, Producing plural wavelength output), John Edward Spencer et al. / Photodigm, Inc. (Richardson, US)

New documents
  • Process for the Production of the Actinobacillus Pleuropneumoniae Toxins APXI or APXIII in a Liquid Culture Medium Under Supply of Air Enriched in Carbon Dioxide
  • Method for Manufacturing Nonvolatile Memory Device
  • Supply Chain Demand Satisfaction
  • Supply-Line Management Device
  • Storage Control Device and Method for Managing Snapshot