Abstract

A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP …

Legal parties

Party
Inventors (applicants): Shunichi Sato, Naoto Jikutani
Assignees (initial): Ricoh Company, Limited (Tokyo, JP)
Agents: Dickstein Shapiro LLP (attorney)

The application was examined by Tuan Nguyen, Jessica Stultz (USPTO dept. 2828)

Claims

  • 1. A semiconductor light-emitting device, comprising: …
  • 2. A semiconductor light-emitting device, as claimed in claim 1 , wherein said semiconductor substrate …
  • 3. A semiconductor light-emitting device as claimed in claim 1 , wherein said to-be-oxidized layer …

International priority data

JP: 2000-144604 / May. 12, 2000 (national)
JP: 11-243745 / Aug. 30, 1999 (national)
JP: 11-220649 / Aug. 4, 1999 (national)
JP: 11-229794 / Aug. 16, 1999 (national)
JP: 2000-057254 / Mar. 2, 2000 (national)
JP: 11-339267 / Nov. 30, 1999 (national)

Cited documents

Patents

  • Kidoguchi US 6118800 A, Sep. 1, 2000
  • Jewell US 6014395 A, Jan. 1, 2000
  • Jikutani US 6884291 B1, Apr. 1, 2005
  • JP 06-350189, Dec. 1, 1994
  • Sato et al. US 6542528 B1, Apr. 1, 2003
  • Scott US 5594751 A, Jan. 1, 1997
  • JP 05-013884, Jan. 1, 1993
  • JP 10-505465, May. 1, 1998
  • JP 63-278395, Nov. 1, 1988
  • Kajimura US 4288757 A, Sep. 1, 1981
  • Yoshida US 5446753 A / 372/46.01, Aug. 1, 1995
  • JP 08-181378, Jul. 1, 1996
  • Naito US 5386429 A, Jan. 1, 1995
  • Deppe et al. US 5206871 A, Apr. 1, 1993
  • JP 40-515-7919 A, Jun. 1, 1993
  • Ramdani et al. US 5815524 A, Sep. 1, 1998
  • Ramdani et al. US 6008067 A, Dec. 1, 1999
  • Jewell et al. US 5295147 A, Mar. 1, 1994
  • JP 07-302953, Nov. 1, 1995
  • JP 06-268318, Sep. 1, 1994
  • Jikutani et al. US 6563851 B1, May. 1, 2003
  • JP 07-307525, Nov. 1, 1995
  • Sato et al. US 6207973 B1, Mar. 1, 2001
  • Jewell US 5719891 A, Feb. 1, 1998
  • Takahashi US 6856631 B1, Feb. 1, 2005
  • Jewell US 5985683 A, Nov. 1, 1999
  • JP 36-128-0687 A, Dec. 1, 1986
  • Deppe et al. US 6075804 A, Jun. 1, 2000
  • JP 10-098232, Apr. 1, 1998
  • JP 09-298337, Nov. 1, 1997
  • Wada et al. US 6028874 A, Feb. 1, 2000
  • Frensley US 4866488 A, Sep. 1, 1989
  • Fukunaga US 5602866 A, Feb. 1, 1997
  • Jikutani et al. US 6983004 B2, Jan. 1, 2006
  • Jikutani et al. US 7139297 B2, Nov. 1, 2006
  • Sato US 6072196 A, Jun. 1, 2000
  • Schneider et al. US 5557627 A, Sep. 1, 1996
  • Jikutani et al. US 7684456 B2, Mar. 1, 2010
  • Hasegawa US 5986288 A, Nov. 1, 1999
  • JP 05-041560, Feb. 1, 1993
  • JP 10-032364, Feb. 1, 1998

Brief Description of the Drawings

FIG. 1 is a diagram showing the construction of a conventional laser diode of edge-emission type; FIG. 2 is a diagram showing the construction of another conventional laser diode of edge-emission …

Description

Background of the Invention

The present invention generally relates to semiconductor devices and more particularly to semiconductor light-emitting devices and laser diodes. Particularly, the present invention relates to a laser diode operable in a wavelength …

Cross-Reference to Related Applications

The present application is a divisional of U.S. application Ser. No. 12/696,322, filed on Jan. 29, 2010, now U.S. Pat. No. 8,009,714 which is a divisional of U.S. application Ser. …

First Embodiment

FIG. 1 shows the structure of a laser diode according to a first embodiment of the present invention. Referring to FIG. 1 , the laser diode is constructed on a GaAsP …

More details about Laser Diode and Semiconductor Light-Emitting Device Producing Visible-Wavelength Radiation

Miscellaneous patent data

The patent particularly claims a semiconductor light-emitting device, comprising…, the invention is named Laser Diode and Semiconductor Light-Emitting Device Producing Visible-Wavelength Radiation, the patent grant was extended by 5 days, explained by 48 figures, similar patents are classified under Plural active media or active media having plural dopants, Optical Fiber Laser, comprising quantum well or superlattice structures, e.g. single quantum well lasers, Processes or apparatus for excitation, e.g. pumping, Buried stripe structure, stabilising of frequency, Cooling arrangements, Optical pumping, Raman Laser, Having a ring configuration, the exemplary patent drawings are Diagram showing the construction of a further, Laser Diode and Semiconductor Light-Emitting, Diagram showing the construction of another, Diagram showing the construction of a conventional, the assignee location is Tokyo (JP); its company is Ricoh Company, Limited, the inventor's first name is Naoto, and his last name is Jikutani, the grant number is 08537870 (publication number), the application publication date is Jul. 21, 2011, categorized under Having oxidized region as a primary classification, the assignee classification - a foreign company or corporation, the protection scope is defined by 16 claims, was examined by Jessica Stultz, the main examiner, Tuan Nguyen, the assistant (2828 USPTO department), the application number is 13/188,208 (U.S.), the invention description is illustrated by 33 drawings, invented by Shunichi Sato et al., the published applicant's name is Naoto Jikutani, the agent - Dickstein Shapiro LLP, the grant publication date is Sep. 17, 2013, the claim 1 is exemplary as chosen by the examiner.

Invention classification information

The invention is classified under Having oxidized region, Semiconductor lasers. The designated search classifications include Having oxidized region, With diffraction grating (Bragg reflector).

Patent details
Publication number 08537870
Publication date Sep. 17, 2013
Kind code B2
Application number 13/188,208
Application date Jul. 21, 2011
Application type U
Application series code 13
Extension term 5
National classification 372/46.013
Total number of claims 16
Exemplary claims 1
Number of drawings 33
Number of figures 48
Quick navigation
More similar inventions

Laser Apparatus and Extreme Ultraviolet Light Source Apparatus (US08804778, Aug. 12, 2014 / 12/580,523, Oct. 16, 2009, Tuning), Akira Endo et al. / Gigaphoton Inc. (Tochigi, JP)

Compression Mount for Semiconductor Devices, and Method (US08681829, March 25, 2014 / 13/476,762, May 21, 2012, Heat sink), Robert E. Grove / Intellectual Light, Inc. (Pleasanton, US)

Green Laser System (US08675698, March 18, 2014 / 12/046,838, March 12, 2008, Frequency multiplying), Deyu Zhou / Opnext, Inc. (Eatontown, US)

Also viewed with this patent

Laser Diode Write Driver Feedback, Current Mirror, and Differential-Pair Circuitry (US08537868, Sept. 17, 2013 / 13/662,712, Oct. 29, 2012, For driving or controlling laser), Indumini Ranmuthu et al. / Texas Instruments Incorporated (Dallas, US)

High Power Surface Mount Technology Package for Side Emitting Laser Diode (US08537873, Sept. 17, 2013 / 13/554,319, July 20, 2012, Reflector), Vincent V. Wong et al. / JDS Uniphase Corporation (Milpitas, US)

GaN Laser Element (US08548019, Oct. 1, 2013 / 13/438,423, April 3, 2012, Semiconductor), Shigetoshi Ito et al. / Sharp Kabushiki Kaisha (Osaka-shi, JP)

New documents
  • Process for the Production of the Actinobacillus Pleuropneumoniae Toxins APXI or APXIII in a Liquid Culture Medium Under Supply of Air Enriched in Carbon Dioxide
  • Method for Manufacturing Nonvolatile Memory Device
  • Supply Chain Demand Satisfaction
  • Supply-Line Management Device
  • Storage Control Device and Method for Managing Snapshot