Abstract

Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure …

Legal parties

Party
Inventors (applicants): Koichiro Adachi, Shinji Tsuji, Toshiki Sugawara, Kazunori Shinoda, Yasunobu Matsuoka
Assignees (initial): Hitachi, Ltd. (Tokyo, JP)
Agents: Miles & Stockbridge P.C. (attorney)

The application was examined by Julio J Maldonado (USPTO dept. 2828), Michael Carter

Claims

  • 1. A horizontal-cavity surface-emitting laser comprising, on a semiconductor substrate: …
  • 2. The horizontal-cavity surface-emitting laser according to claim 1 , wherein …
  • 3. The horizontal-cavity surface-emitting laser according to claim 2 , wherein …

International priority data

JP: 2009-271678 / Nov. 30, 2009 (national)

Cited documents

Patents

  • JP 2007-5594 A, Jan. 1, 2007
  • Eitel US 2003/0231682 A1 / 372/45, Dec. 1, 2003
  • Shinoda et al. US 2008/0266638 A1 / 359/237, Oct. 1, 2008
  • Aoki US 2006/0291516 A1, Dec. 1, 2006

Drawings

Brief Description of Drawings

FIG. 1A is a cross-sectional view of a horizontal-cavity surface-emitting laser having a conventional structure in the optical axis direction. FIG. 1B is a planar view …

Description

Technical Field

The present invention relates to a semiconductor laser element used for optical communications, an optical disk, a medical sensor, and the like, and an optical module using …

Description of Embodiments

Hereinafter, embodiments will be described in detail using the drawings. A structural example of a conventional horizontal-cavity surface-emitting laser will be described using FIGS. 1A and 1B . Hereinafter, a structure …

First Embodiment

A structure of a horizontal-cavity surface-emitting laser according to a first embodiment will be described using FIG. 2A , FIG. 2B , FIGS. 3A to 3F , …

More details about Horizontal-Cavity Surface-Emitting Laser

Miscellaneous patent data

The patent particularly claims a horizontal-cavity surface-emitting laser comprising, on a semiconductor…, categorized under With vertical output (surface emission) as a primary classification, the patent grant was extended by 147 days, the exemplary patent drawings are Horizontal-Cavity Surface-Emitting Laser, Planar view in which the horizontal-cavity, Birds-eye view of a surface, Cross-sectional view of a horizontal-cavity, the grant number is 08855160 (publication number), the grant publication date is Oct. 7, 2014, invented by Yasunobu Matsuoka et al., the recorded agent's company name - Miles & Stockbridge P.C., the application number is 13/512,595 (U.S.), the invention is named Horizontal-Cavity Surface-Emitting Laser, the assignee classification - a foreign company or corporation, the published inventor's name is Shinoda Kazunori, the applicant's first name is Yasunobu, and his last name is Matsuoka, the invention description is illustrated by 9 drawings, similar patents are classified under Producing plural wavelength output, Frequency, in AIIBVI compounds, e.g. ZnCdSe-laser, Rotating prism, Prism, monitoring the optical output parameters, transversely excited, Having particular electrode structure, Semiconductor, using scattering effects, e.g. stimulated Brillouin or Raman effects, the claim 1 is exemplary as chosen by the examiner, explained by 19 figures, the examination was conducted by Julio J Maldonado (2828 USPTO department) and Michael Carter (assistant examiner), the assignee organization is Hitachi, Ltd., located in Tokyo (JP), the application publication date is Nov. 29, 2010, the protection scope is defined by 9 claims.

Invention classification information

The invention is classified under Surface-emitting lasers, Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30, the resonator having a periodic structure, e.g. in distributed feed-back lasers, With vertical output (surface emission), Heat sink, Mountings, Housings, Electrical excitation, Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers, having a ridge or a stripe structure, Specified output coupling device. The designated search classifications include Specified output coupling device, With vertical output (surface emission), Surface-emitting lasers, the resonator having a periodic structure, e.g. in distributed feed-back lasers, Heat sink.

Patent details
Publication number 08855160
Publication date Oct. 7, 2014
Kind code B2
Application number 13/512,595
Application date Nov. 29, 2010
Application type U
Application series code 13
Int. pub. country WO
Int. pub. number WO2011/065517
Int. publication Jun. 3, 2011
Int. filing country WO
Int. filing PCT/JP2010/071207
Filed internationally Nov. 29, 2010
National stage date May. 29, 2012
Extension term 147
National classification 372/50.124
Total number of claims 9
Exemplary claims 1
Number of drawings 9
Number of figures 19
Quick navigation
More similar inventions

Gallium Nitride Based Laser Dazzling Device and Method (US08837546, Sept. 16, 2014 / 13/937,981, July 9, 2013, Semiconductor), Paul Rudy et al. / Soraa Laser Diode, Inc. (Goleta, US)

Laser Device for Production of a Frequency Comb Free of CEO (US08811435, Aug. 19, 2014 / 13/274,442, Oct. 17, 2011, Frequency multiplying), Thomas Hellerer / TOPTICA Photonics AG (Graefelfing, DE)

Semiconductor Laser Device (US08699536, April 15, 2014 / 13/323,785, Dec. 12, 2011, With strained layer), Tsuguki Noma et al. / Rohm Co., Ltd. (Kyoto, JP)

Also viewed with this patent

Methods for Manufacturing and Using Solid State Laser Systems Having Cladded Lasing Materials (US08837541, Sept. 16, 2014 / 13/455,929, April 25, 2012, Particular Temperature Control), Jerzy Krasinski et al. / Light Age, Inc. (Somerset, US)

Optical Semiconductor Device (US08855163, Oct. 7, 2014 / 14/132,170, Dec. 18, 2013, With vertical output (surface emission)), Mizunori Ezaki et al. / Kabushiki Kaisha Toshiba (Minato-ku, JP)

Multibeam Arrays of Optoelectronic Devices for High Frequency Operation (US08848757, Sept. 30, 2014 / 13/077,769, March 31, 2011, Laser array), John Joseph / Trilumina Corp. (Albuquerque, US)

New documents
  • Process for the Production of the Actinobacillus Pleuropneumoniae Toxins APXI or APXIII in a Liquid Culture Medium Under Supply of Air Enriched in Carbon Dioxide
  • Method for Manufacturing Nonvolatile Memory Device
  • Supply Chain Demand Satisfaction
  • Supply-Line Management Device
  • Storage Control Device and Method for Managing Snapshot