Abstract

Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure …

Legal parties

Party
Inventors (applicants): Koichiro Adachi, Shinji Tsuji, Toshiki Sugawara, Kazunori Shinoda, Yasunobu Matsuoka
Assignees (initial): Hitachi, Ltd. (Tokyo, JP)
Agents: Miles & Stockbridge P.C. (attorney)

The application was examined by Julio J Maldonado (USPTO dept. 2828), Michael Carter

Claims

  • 1. A horizontal-cavity surface-emitting laser comprising, on a semiconductor substrate: …
  • 2. The horizontal-cavity surface-emitting laser according to claim 1 , wherein …
  • 3. The horizontal-cavity surface-emitting laser according to claim 2 , wherein …

International priority data

JP: 2009-271678 / Nov. 30, 2009 (national)

Cited documents

Patents

  • JP 2007-5594 A, Jan. 1, 2007
  • Eitel US 2003/0231682 A1 / 372/45, Dec. 1, 2003
  • Shinoda et al. US 2008/0266638 A1 / 359/237, Oct. 1, 2008
  • Aoki US 2006/0291516 A1, Dec. 1, 2006

Drawings

Brief Description of Drawings

FIG. 1A is a cross-sectional view of a horizontal-cavity surface-emitting laser having a conventional structure in the optical axis direction. FIG. 1B is a planar view …

Description

Technical Field

The present invention relates to a semiconductor laser element used for optical communications, an optical disk, a medical sensor, and the like, and an optical module using …

Description of Embodiments

Hereinafter, embodiments will be described in detail using the drawings. A structural example of a conventional horizontal-cavity surface-emitting laser will be described using FIGS. 1A and 1B . Hereinafter, a structure …

First Embodiment

A structure of a horizontal-cavity surface-emitting laser according to a first embodiment will be described using FIG. 2A , FIG. 2B , FIGS. 3A to 3F , …

More details about Horizontal-Cavity Surface-Emitting Laser

Miscellaneous patent data

The patent particularly claims a horizontal-cavity surface-emitting laser comprising, on a semiconductor…, originally classified under With vertical output (surface emission), the patent grant was extended by 147 days, the drawings include the following: Horizontal-Cavity Surface-Emitting Laser, Planar view in which the horizontal-cavity, Birds-eye view of a surface, Cross-sectional view of a horizontal-cavity, the grant number is 08855160, the patent was granted on Oct. 7, 2014, developed by Yasunobu Matsuoka et al., the recorded agent's company name - Miles & Stockbridge P.C., numbered 13/512,595 (application), the invention is named Horizontal-Cavity Surface-Emitting Laser, the assignee classification - a foreign company or corporation, the published inventor's name is Shinoda Kazunori, the applicant's first name is Yasunobu, and his last name is Matsuoka, the patent is illustrated by 9 drawings, similar classification categories are Producing plural wavelength output, Frequency, in AIIBVI compounds, e.g. ZnCdSe-laser, Rotating prism, Prism, monitoring the optical output parameters, transversely excited, Having particular electrode structure, Semiconductor, using scattering effects, e.g. stimulated Brillouin or Raman effects, the claim number 1 is selected as exemplary, 19 figures are supplied with the description, the examination was conducted by Julio J Maldonado (2828 USPTO department) and Michael Carter (assistant examiner), the assignee organization is Hitachi, Ltd., located in Tokyo (JP), the application was published on Nov. 29, 2010, claims 1-9 comprise the invention scope.

Invention classification information

The invention is classified under Electrical excitation, Mountings, Housings, having a ridge or a stripe structure, With vertical output (surface emission), Heat sink, Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30, Surface-emitting lasers, Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers, the resonator having a periodic structure, e.g. in distributed feed-back lasers, Specified output coupling device. The designated search classifications include Specified output coupling device, With vertical output (surface emission), the resonator having a periodic structure, e.g. in distributed feed-back lasers, Surface-emitting lasers, Heat sink.

Patent details
Publication number 08855160
Publication date Oct. 7, 2014
Kind code B2
Application number 13/512,595
Application date Nov. 29, 2010
Application type U
Application series code 13
Int. pub. country WO
Int. pub. number WO2011/065517
Int. publication Jun. 3, 2011
Int. filing country WO
Int. filing PCT/JP2010/071207
Filed internationally Nov. 29, 2010
National stage date May. 29, 2012
Extension term 147
National classification 372/50.124
Total number of claims 9
Exemplary claims 1
Number of drawings 9
Number of figures 19
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