Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure …

Legal parties

Inventors (applicants): Koichiro Adachi, Shinji Tsuji, Toshiki Sugawara, Kazunori Shinoda, Yasunobu Matsuoka
Assignees (initial): Hitachi, Ltd. (Tokyo, JP)
Agents: Miles & Stockbridge P.C. (attorney)

The application was examined by Julio J Maldonado (USPTO dept. 2828), Michael Carter


  • 1. A horizontal-cavity surface-emitting laser comprising, on a semiconductor substrate: …
  • 2. The horizontal-cavity surface-emitting laser according to claim 1 , wherein …
  • 3. The horizontal-cavity surface-emitting laser according to claim 2 , wherein …

International priority data

JP: 2009-271678 / Nov. 30, 2009 (national)

Cited documents


  • JP 2007-5594 A, Jan. 1, 2007
  • Eitel US 2003/0231682 A1 / 372/45, Dec. 1, 2003
  • Shinoda et al. US 2008/0266638 A1 / 359/237, Oct. 1, 2008
  • Aoki US 2006/0291516 A1, Dec. 1, 2006


Brief Description of Drawings

FIG. 1A is a cross-sectional view of a horizontal-cavity surface-emitting laser having a conventional structure in the optical axis direction. FIG. 1B is a planar view …


Technical Field

The present invention relates to a semiconductor laser element used for optical communications, an optical disk, a medical sensor, and the like, and an optical module using …

Description of Embodiments

Hereinafter, embodiments will be described in detail using the drawings. A structural example of a conventional horizontal-cavity surface-emitting laser will be described using FIGS. 1A and 1B . Hereinafter, a structure …

First Embodiment

A structure of a horizontal-cavity surface-emitting laser according to a first embodiment will be described using FIG. 2A , FIG. 2B , FIGS. 3A to 3F , …

More details about Horizontal-Cavity Surface-Emitting Laser

Miscellaneous patent data

The patent particularly claims a horizontal-cavity surface-emitting laser comprising, on a semiconductor…, categorized under With vertical output (surface emission) as a primary classification, the patent extension term is 147 days, includes the following drawings: Horizontal-Cavity Surface-Emitting Laser, Planar view in which the horizontal-cavity, Birds-eye view of a surface, Cross-sectional view of a horizontal-cavity, the grant publication number is 08855160, the patent was granted on Oct. 7, 2014, developed by Yasunobu Matsuoka et al., the recorded agent's company name - Miles & Stockbridge P.C., numbered 13/512,595 (application), the invention is named Horizontal-Cavity Surface-Emitting Laser, assigned to a foreign company or corporation, the published inventor's name is Shinoda Kazunori, the applicant's first name is Yasunobu, and his last name is Matsuoka, the invention description is illustrated by 9 drawings, similar classification categories are Producing plural wavelength output, Frequency, in AIIBVI compounds, e.g. ZnCdSe-laser, Rotating prism, Prism, monitoring the optical output parameters, transversely excited, Having particular electrode structure, Semiconductor, using scattering effects, e.g. stimulated Brillouin or Raman effects, the claim number 1 is selected as exemplary, 19 figures depict the invention details, the examination was conducted by Julio J Maldonado (2828 USPTO department) and Michael Carter (assistant examiner), the assignee organization is Hitachi, Ltd., located in Tokyo (JP), the application publication date is Nov. 29, 2010, the protection scope is defined by 9 claims.

Invention classification information

The invention is classified under Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers, the resonator having a periodic structure, e.g. in distributed feed-back lasers, Surface-emitting lasers, With vertical output (surface emission), Heat sink, Electrical excitation, Mountings, Housings, having a ridge or a stripe structure, Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02-H01S 5/30, Specified output coupling device. The designated search classifications include Specified output coupling device, With vertical output (surface emission), Surface-emitting lasers, the resonator having a periodic structure, e.g. in distributed feed-back lasers, Heat sink.

Patent details
Publication number 08855160
Publication date Oct. 7, 2014
Kind code B2
Application number 13/512,595
Application date Nov. 29, 2010
Application type U
Application series code 13
Int. pub. country WO
Int. pub. number WO2011/065517
Int. publication Jun. 3, 2011
Int. filing country WO
Int. filing PCT/JP2010/071207
Filed internationally Nov. 29, 2010
National stage date May. 29, 2012
Extension term 147
National classification 372/50.124
Total number of claims 9
Exemplary claims 1
Number of drawings 9
Number of figures 19
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