Featured patents

Semiconductor Device Having Controlled Final Metal Critical Dimension
US 08846464 B1, Sept. 30, 2014, Dummy gate, Bingwu Liu et al. / GLOBALFOUNDRIES Inc. (Grand Cayman, KY)
A method for controlling a critical dimension (CD) of a gate of a semiconductor…

Devices Containing Carbon Nanomaterial Electrical Interconnects Overcoated With Metal Nitride Films and Methods for Production Thereof
US 08822352 B1, Sept. 2, 2014, Insulative material is compound of refractory group metal, zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof), Jonathan W. Ward et al. / Lockheed Martin Corporation (Bethesda, US)
A method comprising:…

Semiconductor Device and Method of Manufacture
US 08828841 B2, Sept. 9, 2014, Grooved and refilled with deposited dielectric material, Chih-Tang Peng et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A method of manufacturing a semiconductor device, the method comprising:…

FinFETs and Fin Isolation Structures
US 08785284 B1, July 22, 2014, Dielectric isolation formed by grooving and refilling with dielectric material, Marc A. Bergendahl et al. / International Business Machines Corporation (Armonk, US)
A method comprising:…

Method of Manufacturing Semiconductor Device
US 08664106 B2, March 4, 2014, Forming solder contact or bonding pad, Haruo Iwatsu / Tokyo Electron Limited (Tokyo, JP)
A method of manufacturing a semiconductor device, wherein a first substrate where…

Semiconductor Interconnect Structure With Multi-Layered Seed Layer Providing Enhanced Reliability and Minimizing Electromigration
US 08658533 B2, Feb. 25, 2014, At least one layer forms a diffusion barrier, Daniel C Edelstein et al. / International Business Machines Corporation (Armonk, US)
A method of performing a sequential catalytic chemical vapor deposition (CVD)…

Method of Processing Silicon and Glass Substrates Using a Laser Peeling Technique
US 08637380 B2, Jan. 28, 2014, Subsequent separation into plural bodies, Takeshi Ishizaki et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A method of manufacturing a semiconductor device, comprising:…

Methods for Depositing Ultra Thin Low Resistivity Tungsten Film for Small Critical Dimension Contacts and Interconnects
US 08623733 B2, Jan. 7, 2014, Avalanche Diode Manufacture, Raashina Humayun et al. / Novellus Systems, Inc. (Fremont, US)
A method of forming a tungsten film on a substrate in a reaction chamber…

Method for Forming Impurity Region of Vertical Transistor and Method for Fabricating Vertical Transistor Using the Same
US 08481390 B2, July 9, 2013, Totally embedded in semiconductive layers, Eun Shil Park et al. / SK Hynix Inc. (Gyeonggi-do, KR)
A method for forming an impurity region of a vertical transistor, comprising:…

Semiconductor Device and Method for Manufacturing the Same
US 08450144 B2, May 28, 2013, Having Metal Oxide or Copper Sulfide Compound Semiconductor Component, Hideyuki Kishida et al. / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A method for manufacturing a semiconductor device comprising:…

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