Featured patents

Multiple-Points Measurement
US 08735180 B2, May 27, 2014, Interconnecting plural devices on semiconductor substrate, Kazuya Okamoto / Nikon Corporation (Tokyo, JP)
A stacking apparatus in which chip assemblies are stacked, comprising:…

Creating Anisotropically Diffused Junctions in Field Effect Transistor Devices
US 08633096 B2, Jan. 21, 2014, Including heat treatment, Qingqing Liang et al. / International Business Machines Corporation (Armonk, US)
A method of forming a transistor device, the method comprising:…

Contact Formation Method, Semiconductor Device Manufacturing Method, and Semiconductor Device
US 08575023 B2, Nov. 5, 2013, Plural layered electrode or conductor, Hiroaki Tanaka et al. / National University Corporation Tohoku University (Miyagi, JP)
A method of forming a contact of a metal semiconductor compound…

Redundant Metal Barrier Structure for Interconnect Applications
US 08592306 B2, Nov. 26, 2013, At least one layer forms a diffusion barrier, Chih-Chao Yang et al. / International Business Machines Corporation (Armonk, US)
A method of forming a semiconductor structure comprising:…

Method for Applying Full Back Surface Field and Silver Busbar to Solar Cell
US 08535971 B2, Sept. 17, 2013, Contact formation, Weiming Zhang et al. / Heraeus Precious Metals North America Conshohocken LLC (West Conshohocken, US)
A method for applying a back contact silver busbar to an aluminum back surface…

Capacitor and Method for Fabricating the Same
US 08530323 B2, Sept. 10, 2013, Stacked capacitor, Jin-Youn Cho et al. / Magnachip Semiconductor, Ltd. (Cheongju-si)
A method for fabricating a capacitor, the method comprising:…

Semiconductor Devices and Methods of Manufacture Thereof
US 08507347 B2, Aug. 13, 2013, Plural gate electrodes, Thomas Schulz / Infineon Technologies AG (Neubiberg, DE)
A CMOS device comprising:…

Hafnium Tantalum Oxide Dielectrics
US 08524618 B2, Sept. 3, 2013, Insulative material is compound of refractory group metal, zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof), Leonard Forbes et al. / Micron Technology, Inc. (Boise, US)
A method comprising:…

Electron Beam Annealing Apparatus and Annealing Methods Using the Same
US 08445366 B2, May 21, 2013, Utilizing wave energy, Dong-joon Ma et al. / Samsung Electronics Co., Ltd. (Gyeonggi-do, KR)
An electron beam annealing apparatus, comprising:…

Method of Manufacturing an Organic Light Emitting Display
US 08450121 B2, May 28, 2013, Electrical characteristic sensed, Kyung-hoon Chung / Samsung Display Co., Ltd. (Yongin, Gyeonggi-Do, KR)
A method of manufacturing an organic light emitting display, comprising:…

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