Featured patents

Three Dimensional Semiconductor Memory Device and Method of Fabricating the Same
US 08815676 B2, Aug. 26, 2014, Including bipolar transistor, Yoo-Chul Kong et al. / Samsung Electronics Co., Ltd. KR
A method of fabricating a nonvolatile memory device, comprising:…

Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method
US 08815663 B2, Aug. 26, 2014, Including recrystallization step, Jin-Wook Seo et al. / Samsung Display Co., Ltd. (Giheung-Gu, Yongin, Gyeonggi-Do, KR)
A method of manufacturing a thin film transistor (TFT), comprising:…

Fin Field Effect Transistor and Fabrication Method
US 08865552 B2, Oct. 21, 2014, Plural gate electrodes, Fumitake Mieno / Semiconductor Manufacturing International Corp. (Shanghai, CN)
A method for forming a fin field effect transistor, comprising:…

Methods of Forming Self-Aligned Contacts for a Semiconductor Device
US 08741723 B2, June 3, 2014, Self-aligned, Min-Hwa Chi / GLOBALFOUNDRIES Inc. (Grand Cayman, KY)
A method, comprising:…

Solar Cell and Manufacturing Method Thereof
US 08703525 B2, April 22, 2014, Direct application of electric current, Joong-Hyun Park / Samsung SDI Co., Ltd. (Yongin-si, KR)
A method for manufacturing a solar cell, comprising:…

Semiconductor Device and Method of Manufacturing the Same
US 08691679 B2, April 8, 2014, Combined with formation of ohmic contact to semiconductor region, Hideto Tamaso / Sumitomo Electric Industries, Ltd. (Osaka-shi, JP)
A method of manufacturing a semiconductor device, comprising the steps of:…

Methods of Fabricating a Semiconductor Device Having a High-K Gate Dielectric Layer and Semiconductor Devices Fabricated Thereby
US 08673711 B2, March 18, 2014, Complementary insulated gate field effect transistors, WeonHong Kim et al. / Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
A method of fabricating a semiconductor device comprising:…

Power Semiconductor Component and Method for the Production Thereof
US 08603912 B2, Dec. 10, 2013, Multiple metal levels, separated by insulating layer, Josef Maynollo et al. / Infineon Technologies AG (Neubiberg, DE)
A method for the production of an integrated power semiconductor component…

Method for Producing a Structure Comprising a Mobile Element by Means of a Heterogeneous Sacrificial Layer
US 08524520 B2, Sept. 3, 2013, Having cantilever element, Pierre-Louis Charvet / Commissariat a l'Energie Atomique (Paris, FR)
A method for producing a structure on a substrate successively comprising:…

Manufacturing Method of High Voltage Device
US 08501567 B2, Aug. 6, 2013, Making plural insulated gate field effect transistors of differing electrical characteristics, Tsung-Yi Huang et al. / Richtek Technology Corporation, R.O.C. (Chupei, Hsin-Chu, TW)
A manufacturing method of a high voltage device, comprising:…

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