Featured patents

ReRAM Stacks Preparation by Using Single ALD or PVD Chamber
US 08846484 B2, Sept. 30, 2014, Resistor, Tim Minvielle et al. / Intermolecular, Inc. (San Jose, US)
A method of making a resistive switching memory device on a substrate, the method…

Semiconductor Device and Method of Manufacturing the Same
US 08802533 B1, Aug. 12, 2014, Having elevated source or drain, Changliang Qin et al. / Institute of Microelectronics, Chinese Academy of Sciences (Beijing, CN)
A method of manufacturing a semiconductor device, the method comprising:…

Group III Nitride Substrate, Semiconductor Device Comprising the Same, and Method for Producing Surface-Treated Group III Nitride Substrate
US 08871647 B2, Oct. 28, 2014, Planarization by etching and coating, Keiji Ishibashi / Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
A method for manufacturing a surface-treated group III nitride substrate,…

Semiconductor Memory Device and Manufacturing Method Thereof
US 08709889 B2, April 29, 2014, Capacitor, Toshihiko Saito / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A method for manufacturing a semiconductor device, the method comprising…

Method of Forming a Layer on a Semiconductor Substrate Having a Plurality of Trenches
US 08673788 B2, March 18, 2014, Silicon, Chung-Hsiu Cheng et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A method of fabricating a semiconductor device, comprising:…

Strained Silicon and Strained Silicon Germanium on Insulator Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
US 08617968 B1, Dec. 31, 2013, Formation of Semiconductive Active Region on Any Substrate, Pouya Hashemi et al. / International Business Machines Corporation (Armonk, US)
A method of forming a semiconductor device comprising:…

Integration of Current Blocking Layer and N-GaN Contact Doping by Implantation
US 08603847 B2, Dec. 10, 2013, Dopant introduction into semiconductor region, Chi-Chun Chen et al. / Varian Semiconductor Equipment Associates, Inc. (Gloucester, US)
A method of fabricating a light emitting diode (LED), comprising:…

Reducing Performance Variation of Narrow Channel Devices
US 08546219 B2, Oct. 1, 2013, Gate electrode in trench or recess in semiconductor substrate, Viorel Ontalus et al. / International Business Machines Corporation (Armonk, US)
A method of forming a transistor, comprising:…

Self Aligned Silicide Device Fabrication
US 08536014 B2, Sept. 17, 2013, Making Passive Device, Kenneth B. Tull et al. / GM Global Technology Operations LLC (Detroit, US)
A method for fabricating a device, the method comprising:…

Methods of Selectively Applying Luminous Material to Light Emitting Devices Based on Measured Output Thereof
US 08476091 B2, July 2, 2013, Including integrally formed optical element, Scott Schwab et al. / Cree, Inc. (Durham, US)
A method of fabricating a light emitting apparatus, comprising:…

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