Featured patents

Semiconductor Device
US 08796077 B2, Aug. 5, 2014, Lead frame, Dai Sasaki et al. / PS4 Luxco, S.a.r.l. (Luxembourg, LU)
A method comprising:…

System and Method for Step Coverage Measurement
US 08859301 B2, Oct. 14, 2014, With Measuring or Testing, Edward Haywood et al. / Intermolecular, Inc. (San Jose, US)
A method of characterizing a film on a 3D device, comprising:…

Non-Volatile Storage Having a Connected Source and Well
US 08765552 B2, July 1, 2014, Having additional gate electrode surrounded by dielectric, Masaaki Higashitani / SanDisk Technologies Inc. (Plano, US)
A method for fabricating non-volatile storage, comprising:…

Electrical Device Fabrication
US 08673681 B2, March 18, 2014, Having Organic Semiconductive Component, Kate Jessie Stone / Novalia Ltd. (Cambridge, GB)
A method of making a semiconductor device comprising:…

Formation of a Channel Semiconductor Alloy by Forming a Nitride Based Hard Mask Layer
US 08664066 B2, March 4, 2014, Making plural insulated gate field effect transistors of differing electrical characteristics, Stephan-Detlef Kronholz et al. / GLOBALFOUNDRIES Inc. (Grand Cayman, KY)
A method, comprising:…

Semiconductor Memory Device and Fabrication Process Thereof
US 08652896 B2, Feb. 18, 2014, Complementary insulated gate field effect transistors, Makoto Yasuda / Fujitsu Semiconductor Limited (Yokohama, JP)
A method for fabricating a semiconductor memory device, said semiconductor memory…

Memory Devices and Methods of Forming Memory Devices
US 08580645 B2, Nov. 12, 2013, Source or drain doping, Di Li et al. / Micron Technology, Inc. (Boise, US)
A method of forming a memory device, comprising:…

Semiconductor Device Having a Buried Gate and Method for Manufacturing the Same
US 08507344 B2, Aug. 13, 2013, Gate electrode in trench or recess in semiconductor substrate, Chan Woo Kim / Hynix Semiconductor Inc. (Icheon, KR)
A method for forming a semiconductor device, the method comprising:…

Composition for Forming an Organic Semiconducting Device
US 08492192 B2, July 23, 2013, Having organic semiconductor component, Sepas Setayesh et al. / Creator Technology B.V. (Breda, NL)
A composition for forming a semiconducting device comprising:…

Growth of Planar, Non-Polar, Group-III Nitride Films
US 08450192 B2, May 28, 2013, Compound semiconductor, Paul T. Fini et al. / The Regents of the University of California (Oakland, US)
A method for fabricating Group-III nitride, comprising:…

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