Featured patents

Cleaning Solution for Substrate for Semiconductor Device
US 08846533 B2, Sept. 30, 2014, Simultaneous, Youichi Ishibashi / Kao Corporation (Tokyo, JP)
A method for producing a substrate for a semiconductor device, comprising:…

Structure and Method for Forming a Low Gate Resistance High-K Metal Gate Transistor Device
US 08772100 B2, July 8, 2014, Complementary insulated gate field effect transistors, Keith Kwong Hon Wong et al. / Global Foundries Inc. (Grand Cayman, KY)
A method for forming a low gate resistance high-k metal gate transistor device,…

Vertical-Type Semiconductor Devices and Methods of Manufacturing the Same
US 08603878 B2, Dec. 10, 2013, Tunneling insulator, Jong-Hyuk Kang et al. / Samsung Electronics Co., Ltd. KR
A method of manufacturing a vertical-type non-volatile memory device, comprising:…

Replacement Gate MOSFET With a High Performance Gate Electrode
US 08592266 B2, Nov. 26, 2013, Having insulated gate, Chengwen Pei et al. / International Business Machines Corporation (Armonk, US)
A method of forming a semiconductor structure comprising:…

Semiconductor Memory Device and Method for Manufacturing Same
US 08551852 B2, Oct. 8, 2013, Resistor, Kenji Aoyama / Kabushiki Kaisha Toshiba (Tokyo, JP)
A method for manufacturing a semiconductor memory device, comprising: forming…

Non-Volatile Memory Cell With Lateral Pinning
US 08541247 B2, Sept. 24, 2013, Having Magnetic or Ferroelectric Component, Haiwen Xi et al. / Seagate Technology LLC (Scotts Valley, US)
A method comprising:…

Laser Processing Method
US 08541319 B2, Sept. 24, 2013, Radiation or Energy Treatment Modifying Properties of Semiconductor Region of Substrate, Keisuke Araki et al. / Hamamatsu Photonics K.K. (Hamamatsu-shi, Shizuoka, JP)
A laser processing method comprising:…

Nitride Shallow Trench Isolation (STI) Structures and Methods for Forming the Same
US 08530327 B2, Sept. 10, 2013, Grooved and refilled with deposited dielectric material, Franklin Chiang et al. / Wafertech, LLC (Camas, US)
A method for forming a substantially silicon nitride shallow trench isolation…

Method for Making Light Emitting Diode
US 08476094 B2, July 2, 2013, Groove formation, Shou-Shan Fan et al. / Tsinghua University (Beijing, CN)
A method for making a light emitting diode, the method comprising:…

Methods of Forming Bonded Semiconductor Structures
US 08481406 B2, July 9, 2013, Subsequent separation into plural bodies, Mariam Sadaka et al. / Soitec (Bernin, FR)
A method of forming a bonded semiconductor structure, comprising:…

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