Featured patents

Methods of Fabricating Semiconductor Devices Having Increased Areas of Storage Contacts
US 08835252 B2, Sept. 16, 2014, Stacked capacitor, Hyun-Seung Song et al. / Samsung Electronics Co., Ltd. KR
A method of fabricating a semiconductor device, the method comprising:…

Method of Forming an Interconnect Structure Having an Enlarged Region
US 08785323 B2, July 22, 2014, With formation of opening in insulative layer, Chien-Jung Wang / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A method of forming an interconnect structure, the method comprising:…

Methods for Fabricating and Orienting Semiconductor Wafers
US 08871605 B2, Oct. 28, 2014, Having substrate registration feature, Wan-Lai Chen et al. / Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu, TW)
A method, comprising:…

Moisture Barrier for Photovoltaic Cells
US 08716053 B2, May 6, 2014, Packaging or treatment of packaged semiconductor, Kenneth C Keup et al. / E I du Pont de Nemours and Company (Wilmington, US)
A process for sealing a multilayer article comprising:…

Optoelectronic Device Having a Sandwich Structure and Method for Forming the Same
US 08623684 B2, Jan. 7, 2014, Compound semiconductor, Jing-Shun Huang et al. / National Taiwan University (Taipei, TW)
A method for forming an organic optoelectronic device, comprising:…

Method for Fabricating a Dual-Crystalline Silicon Suspension System Using Pre-Fabricated Cavities
US 08614110 B1, Dec. 24, 2013, Physical stress responsive, Richard Waters et al. / The United States of America as represented by the Secretary of the Navy (Washington, US)
A method comprising the steps of:…

Array Substrate for Organic Electroluminescent Display Device and Method of Fabricating the Same
US 08603845 B2, Dec. 10, 2013, Making emissive array, Hee-Dong Choi et al. / LG Display Co., Ltd (Seoul, KR)
A method of fabricating an array substrate for an organic electroluminescent…

Semiconductor Memory Device and Method for Manufacturing Same
US 08551852 B2, Oct. 8, 2013, Resistor, Kenji Aoyama / Kabushiki Kaisha Toshiba (Tokyo, JP)
A method for manufacturing a semiconductor memory device, comprising: forming…

Etching Radical Controlled Gas Chopped Deep Reactive Ion Etching
US 08546264 B2, Oct. 1, 2013, Reactive ion beam etching, Deirdre Olynick et al. / The Regents of the University of California (Oakland, US)
A method of etching radical reduced, gas chopped deep reactive ion etching…

Manufacturing Method of Semiconductor Device
US 08501585 B2, Aug. 6, 2013, Subsequent separation into plural bodies, Naoki Suzuki et al. / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A manufacturing method of a semiconductor device, comprising the steps of:…

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