Featured patents

Method for Manufacturing Semiconductor Device and Semiconductor Device
US 08772175 B2, July 8, 2014, Silicon, Fujio Masuoka et al. / Unisantis Electronics Singapore Pte. Ltd. (Peninsula Plaza, SG)
A method for manufacturing a semiconductor device comprising:…

Finlike Structures and Methods of Making Same
US 08759173 B2, June 24, 2014, Having insulated gate, Chi-Ming Yang et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A method of forming a device comprising:…

Current-Confined Heterojunction Bipolar Transistor
US 08735256 B1, May 27, 2014, Wide bandgap emitter, Alan Sugg / Vega Wave Systems, Inc. (West Chicago, US)
A method of using a heterojunction bipolar transistor, the method comprising:…

Ballasted Polycrystalline Fuse
US 08728875 B2, May 20, 2014, Making Device Array and Selectively Interconnecting, Michael David Church / Intersil Corporation (Milpitas, US)
A method of forming a fuse, the method comprising:…

MOS Transistors Having Reduced Leakage Well-Substrate Junctions
US 08716097 B2, May 6, 2014, Avalanche Diode Manufacture, Amitava Chatterjee et al. / Texas Instruments Incorporated (Dallas, US)
A method of forming a Metal-Oxide Semiconductor (MOS) transistor, comprising:…

Method for Manufacturing a Semiconductor Structure
US 08703611 B1, April 22, 2014, Utilizing lift-off, Ming-Kuan Chen / United Microelectronics Corp. (Hsinchu, TW)
A method for manufacturing a semiconductor structure, comprising:…

Superior Integrity of High-K Metal Gate Stacks by Preserving a Resist Material Above End Caps of Gate Electrode Structures
US 08722481 B2, May 13, 2014, Having insulated gate, Peter Javorka et al. / GLOBALFOUNDRIES Inc. (Gand Cayman, KY)
A method of fabricating a semiconductor device, the method comprising:…

Junction Leakage Suppression in Memory Devices
US 08536011 B2, Sept. 17, 2013, Using same conductivity-type dopant, Hsiao-Han Thio et al. / Spansion LLC (Sunnyvale, US)
A memory device comprising:…

Method for Manufacturing a Strained Channel MOS Transistor
US 08530292 B2, Sept. 10, 2013, Dummy gate, Thierry Poiroux et al. / STMicroelectronics (Grenoble 2) SAS (Grenoble, FR
A method for manufacturing a strained channel MOS transistor, comprising…

Semiconductor Device and Manufacturing Method Thereof
US 08507345 B2, Aug. 13, 2013, Gate electrode in trench or recess in semiconductor substrate, Saichirou Kaneko et al. / Nissan Motor Co., Ltd. (Kanagawa-Ken, JP)
A method of manufacturing a semiconductor device, comprising:…

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