Featured patents

Aromatic Hydrocarbon Resin and Composition for Forming Underlayer Film for Lithography
US 08586289 B2, Nov. 19, 2013, Seiji Kita et al. / Mitsubishi Gas Chemical Company, Inc. (Tokyo, JP)
A composition for forming an underlayer film for lithography comprising…

Aromatic Hydrocarbon Resin, Underlayer Film Forming Composition for Lithography, and Method for Forming Multilayer Resist Pattern
US 08741553 B2, June 3, 2014, Masatoshi Echigo et al. / Mitsubishi Gas Chemical Company, Inc. (Tokyo, JP)
An underlayer film forming composition for lithography, the composition being…

Double Patterning Strategy for Contact Hole and Trench in Photolithography
US 08741552 B2, June 3, 2014, Chien-Wei Wang et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A lithography patterning method, comprising:…

Double Patterning Strategy for Contact Hole and Trench in Photolithography
US 08450052 B2, May 28, 2013, Feng-Cheng Hsu et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A method comprising:…

Front Side Wafer ID Processing
US 08822141 B1, Sept. 2, 2014, Subramanian S. Iyer et al. / International Business Machines Corporation (Armonk, US)
A method for printing a wafer ID on a wafer, the method comprising the steps…

Hardmask Composition Having Antireflective Properties and Method of Patterning Material on Substrate Using the Same
US 08445187 B2, May 21, 2013, Jin Kuk Lee et al. / Cheil Industries, Inc. (Gumi-si, Gyeongsangbuk-do, KR)
A hardmask composition, comprising:…

High-Resolution Photolithographic Method for Forming Nanostructures, in Particular in the Manufacture of Integrated Electronic Devices
US 08715915 B2, May 6, 2014, Davide Giuseppe Patti et al. / STMicroelectronics S.r.l. (Agrate Brianza (MB), IT
A photolithographic process, comprising the steps of:…

Line Edge Roughness Reduction and Double Patterning
US 08501395 B2, Aug. 6, 2013, Xumou Xu et al. / Applied Materials, Inc. (Santa Clara, US)
A method of patterning a structure comprising:…

Line Width Roughness Improvement With Noble Gas Plasma
US 08753804 B2, June 17, 2014, Youn Gi Hong et al. / Lam Research Corporation (Fremont, US)
A method for etching features in an etch layer over a substrate and disposed…

Lithography Method and Device
US 08722320 B2, May 13, 2014, Durga Prasanna Panda
A method, comprising:…

Method of Forming Large-Area Masters for Replication of Transfer Lithography Templates
US 08703406 B2, April 22, 2014, Charles D. Schaper / Transfer Devices Inc. (Santra Clara, US)
A method of forming a master, comprising:…

Method of Manufacturing Mask for Depositing Thin Film
US 08568963 B2, Oct. 29, 2013, Jung-Woo Ko et al. / Samsung Display Co., Ltd. (Yongin, Gyeonggi-do, KR)
A method of manufacturing a mask for depositing a thin film, the method…

Methods of Forming a Pattern in a Material and Methods of Forming Openings in a Material to Be Patterned
US 08512938 B2, Aug. 20, 2013, Michael Hyatt et al. / Micron Technology, Inc. (Boise, US)
A method of forming a pattern in a material, the method comprising:…

Methods of Forming a Patterned, Silicon-Enriched Developable Antireflective Material and Semiconductor Device Structures Including the Same
US 08507191 B2, Aug. 13, 2013, Yuan He et al. / Micron Technology, Inc. (Boise, US)
A method of forming a patterned, silicon-enriched developable antireflective…

Naphthalene Derivative, Resist Bottom Layer Material, Resist Bottom Layer Forming Method, and Patterning Process
US 08795955 B2, Aug. 5, 2014, Takeru Watanabe et al. / Shin-Etsu Chemical Co., Ltd. (Tokyo, JP)
A naphthalene derivative having the general formula (1):…

Pattern Forming Method
US 08753803 B2, June 17, 2014, Yoshihisa Kawamura et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A pattern forming method, comprising:…

Pattern Forming Method and Resist Underlayer Film-Forming Composition
US 08715916 B2, May 6, 2014, Shin-ya Minegishi et al. / JSR Corporation (Tokyo, JP)
A pattern-forming method comprising:…

Pattern-Forming Method, and Composition for Forming Resist Underlayer Film
US 08859191 B2, Oct. 14, 2014, Shinya Nakafuji et al. / JSR Corporation (Tokyo, JP)
A method for forming a pattern, the method comprising:…

Patterning Process
US 08530147 B2, Sept. 10, 2013, Chin-Cheng Yang / MACRONIX International Co., Ltd. (Hsinchu, TW)
A method for patterning a material layer consisting of:…

Process of Semiconductor Fabrication With Mask Overlay on Pitch Multiplied Features and Associated Structures
US 08563229 B2, Oct. 22, 2013, Luan C. Tran / Micron Technology, Inc. (Boise, US)
A method for patterning a substrate, comprising:…

Surface Modifying Material, Method of Forming Resist Pattern, and Method of Forming Pattern
US 08735052 B2, May 27, 2014, Isao Hirano et al. / Tokyo Ohka Kogyo Co., Ltd. (Kawasaki-shi, JP)
A method of forming a resist pattern, comprising:…

Tone Inversion of Self-Assembled Self-Aligned Structures
US 08771929 B2, July 8, 2014, Michael A. Guillorn et al. / International Business Machines Corporation (Armonk, US)
A method of forming a patterned structure comprising:…

Patentorg has 22 documents under Including Etching Substrate Patents.

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