Featured patents

Surface-Emitting Laser Element, Surface-Emitting Laser Array, Optical Scanner Device, and Image Forming Apparatus
US 08855159 B2, Oct. 7, 2014, Particular current control structure, Shunichi Sato et al. / Ricoh Company, Ltd. (Tokyo, JP)
A surface-emitting laser element comprising:…

Mirror Arrangement for Guiding a Laser Beam in a Laser System and Beam Guiding Method for a Laser Beam
US 08780947 B2, July 15, 2014, Control of pulse characteristics, Maximilian Josef Lederer et al. / High Q Laser GmbH (Rankweil, AT)
A mirror arrangement for guiding a laser beam in a laser system, in particular…

Wavelength Tunable Laser Device, Optical Module, and Method of Controlling Wavelength Tunable Laser
US 08767781 B2, July 1, 2014, Tuning, Takeshi Okamoto et al. / NEC Corporation (Tokyo, JP)
A wavelength tunable laser device, comprising:…

Precision Optical Frequency Tunable Laser
US 08731011 B2, May 20, 2014, Tuning, Peiliang Gao / GP Photonics Inc. (Tianjin, CN)
A precision optical frequency tunable laser comprising a laser gain medium,…

Opto-Isolator Including a Vertical Cavity Surface Emitting Laser
US 08675701 B2, March 18, 2014, Having particular beam control circuit component, Harold Young Walker et al. / Finisar Corporation (Sunnyvale, US)
An opto-isolator comprising:…

Laser Diode and Method of Manufacturing the Same
US 08634443 B2, Jan. 21, 2014, Particular confinement layer, Toshiaki Igarashi / Renesas Electronics Corporation (Kawasaki-Shi, Kanagawa, JP)
A laser diode, comprising:…

Long Semiconductor Laser Cavity in a Compact Chip
US 08605767 B2, Dec. 10, 2013, Particular Resonant Cavity, Cristian Stagarescu et al. / Binoptics Corporation (Ithaca, US)
A semiconductor chip, comprising:…

Quantum Cascade Lasers With Electrically Tunable Emission Wavelengths
US 08571082 B2, Oct. 29, 2013, Particular current control structure, Leon Shterengas et al. / Maxion Technologies, Inc. (College Park, US)
A tunable quantum cascade laser comprising:…

Laser Diode and Method of Manufacturing the Same
US 08520712 B2, Aug. 27, 2013, Particular confinement layer, Tsunenori Asatsuma et al. / Sony Corporation (Tokyo, JP)
A laser diode, on a semiconductor substrate, comprising:…

Semiconductor Light Emitting Device
US 08526477 B2, Sept. 3, 2013, Particular coating on facet, Jongil Hwang et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor laser diode comprising:…

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