Featured patents

Edge Emitting Semiconductor Laser Chip
US 08831061 B2, Sept. 9, 2014, Particular confinement layer, Christian Lauer et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
An edge emitting semiconductor laser chip comprising:…

Mount for Semiconductor Devices Using Conformable Conductive Layers, and Method
US 08792527 B2, July 29, 2014, Particular Temperature Control, Robert E. Grove / Intellectual Light, Inc. (Pleasanton, US)
An apparatus for generating laser light comprising:…

Linear Adaptive Optics System in Low Power Beam Path and Method
US 08731013 B2, May 20, 2014, Modulation, William B. King et al. / Raytheon Company (Waltham, US)
A system comprising:…

High Brightness Laser Diode Module
US 08711894 B2, April 29, 2014, Laser array, Vadim Chuyanov et al. / IPG Photonics Corporation (Oxford, US)
A laser diode module centered along an optical axis comprising:…

Laser Diode, Optical Disk Device and Optical Pickup
US 08615027 B2, Dec. 24, 2013, With saturable absorption layer, Makoto Oota et al. / Sony Corporation (Tokyo, JP)
A laser diode comprising:…

Semiconductor Light-Emitting Device
US 08582615 B2, Nov. 12, 2013, Particular Temperature Control, Susumu Sato et al. / Sony Corporation (Tokyo, JP)
A semiconductor light-emitting device comprising:…

High Efficiency Slab-Coupled Optical Waveguide Laser and Amplifier
US 08571080 B2, Oct. 29, 2013, Particular confinement layer, Joseph P. Donnelly et al. / Massachusetts Institute of Technology (Cambridge, US)
A slab-coupled optical waveguide laser (SCOWL) comprising:…

High Power Surface Mount Technology Package for Side Emitting Laser Diode
US 08537873 B2, Sept. 17, 2013, Reflector, Vincent V. Wong et al. / JDS Uniphase Corporation (Milpitas, US)
A laser emitter package comprising:…

Laser Diode Arrangement
US 08532154 B2, Sept. 10, 2013, Liquid coolant, Ekkehard Kress / IIE GmbH & Co KG (Soyen, DE)
Power semiconductor arrangement comprising, in combination:…

Gallium Nitride-Based Semiconductor Laser Device, and Method for Fabricating Gallium Nitride-Based Semiconductor Laser Device
US 08477818 B2, July 2, 2013, Particular confinement layer, Takashi Kyono et al. / Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
A gallium nitride (GaN)-based semiconductor laser device comprising:…

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