Featured patents

Direct Modulated Modified Vertical-Cavity Surface-Emitting Lasers and Method
US 08494018 B2, July 23, 2013, Mary K. Brenner et al. / Vixar, Inc. (Plymouth, US)
A laser system having separately electrically operable cavities for emitting…

Edge Emitting Semiconductor Laser Chip
US 08831061 B2, Sept. 9, 2014, Christian Lauer et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
An edge emitting semiconductor laser chip comprising:…

Edge-Emitting Semiconductor Laser
US 08737444 B2, May 27, 2014, Alvaro Gomez-Iglesias et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
An edge emitting semiconductor laser comprising:…

Edge-Emitting Semiconductor Laser
US 08625648 B2, Jan. 7, 2014, Marc Schillgalies et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
An edge emitting semiconductor laser comprising:…

Edge-Emitting Semiconductor Laser With Photonic-Bandgap Structure Formed by Intermixing
US 08582616 B2, Nov. 12, 2013, Thomas C. Hasenberg et al. / Coherent, Inc. (Santa Clara, US)
A method of fabricating an edge emitting semiconductor laser comprising the steps…

Gallium Nitride-Based Semiconductor Laser Device, and Method for Fabricating Gallium Nitride-Based Semiconductor Laser Device
US 08477818 B2, July 2, 2013, Takashi Kyono et al. / Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
A gallium nitride (GaN)-based semiconductor laser device comprising:…

High Efficiency Slab-Coupled Optical Waveguide Laser and Amplifier
US 08571080 B2, Oct. 29, 2013, Joseph P. Donnelly et al. / Massachusetts Institute of Technology (Cambridge, US)
A slab-coupled optical waveguide laser (SCOWL) comprising:…

High Speed Lasing Device
US 08798112 B2, Aug. 5, 2014, Nicolae Pantazi Chitica / Tyco Electronics Svenska Holdings AB (Jaerfaella, SE)
A lasing device for use in an optical interconnect, the lasing device comprising:…

Infrared Semiconductor Laser
US 08811442 B2, Aug. 19, 2014, Joachim Wagner et al. / Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V. (Munich, DE)
A semiconductor laser having at least one quantum film in which electron hole…

Interband Cascade Lasers With Engineered Carrier Densities
US 08798111 B2, Aug. 5, 2014, William W. Bewley et al. / The United States of America, as represented by the Secretary of the Navy (Washington, US)
A type-II interband cascade gain medium, comprising:…

Laser Diode and Method of Manufacturing the Same
US 08634443 B2, Jan. 21, 2014, Toshiaki Igarashi / Renesas Electronics Corporation (Kawasaki-Shi, Kanagawa, JP)
A laser diode, comprising:…

Laser Diode and Method of Manufacturing the Same
US 08520712 B2, Aug. 27, 2013, Tsunenori Asatsuma et al. / Sony Corporation (Tokyo, JP)
A laser diode, on a semiconductor substrate, comprising:…

Laser Light Coupling Into SOI CMOS Photonic Integrated Circuit
US 08787417 B2, July 22, 2014, Gunther Roelkens et al. / Universiteit Gent (Ghent, BE)
A hybrid laser for generating radiation, the hybrid laser comprising an optical…

Light Emitting Device
US 08472489 B2, June 25, 2013, Yosuke Kobayashi et al. / The University of Tokyo JP
A light emitting device comprising a ring optical resonator laminated…

Method and System for Providing Bidirectional Light Sources With Broad Spectrum
US 08451876 B1, May 28, 2013, James W. Raring et al. / SORAA, Inc. (Fremont, US)
An optical device comprising:…

Method and System of Heterogeneous Substrate Bonding for Photonic Integration
US 08630326 B2, Jan. 14, 2014, John Dallesasse et al. / Skorpios Technologies, Inc. (Albuquerque, US)
A hybrid integrated optical device comprising:…

Method of Producing a Radiation-Emitting Component and Radiation-Emitting Component
US 08576889 B2, Nov. 5, 2013, Peter Brick / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
A radiation-emitting component comprising:…

Optical Semiconductor Device and Method of Manufacturing Optical Semiconductor Device
US 08798110 B2, Aug. 5, 2014, Taro Hasegawa et al. / Sumitomo Electric Device Innovations, Inc. (Yokohama-shi, JP)
An optical semiconductor device comprising:…

P-Type Isolation Between QCL Regions
US 08514902 B2, Aug. 20, 2013, Chung-En Zah et al. / Corning Incorporated (Corning, US)
A quantum cascade laser comprising one or more p-type electrical isolation…

Plasmon Lasers at Deep Subwavelength Scale
US 08509276 B2, Aug. 13, 2013, Xiang Zhang et al. / The Regents of the University of California (Oakland, US)
A plasmon laser source, comprising:…

Quantum Cascade Laser
US 08514903 B2, Aug. 20, 2013, Tadataka Edamura et al. / Hamamatsu Photonics K.K. (Hamamatsu-shi, Shizuoka, JP)
A quantum cascade laser comprising:…

Semiconductor Component and Method for Producing a Semiconductor Component
US 08565278 B2, Oct. 22, 2013, Christoph Eichler et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
A semiconductor component, comprising a semiconductor body with a semiconductor…

Semiconductor Laser Device
US 08767788 B2, July 1, 2014, Kimio Shigihara / Mitsubishi Electric Corporation (Tokyo, JP)
A semiconductor laser device comprising:…

Semiconductor Laser Device and Manufacturing Method Thereof
US 08611386 B2, Dec. 17, 2013, Tsuguki Noma et al. / Rohm Co., Ltd. (Kyoto, JP)
A semiconductor laser device, comprising:…

Semiconductor Laser Element and Method of Manufacturing Semiconductor Laser Element
US 08842707 B2, Sept. 23, 2014, Hirotatsu Ishii et al. / Furukawa Electric Co., Ltd. (Tokyo, JP)
A semiconductor laser element, comprising: an active layer;…

Semiconductor Laser Element and Method of Manufacturing the Same
US 08660160 B2, Feb. 25, 2014, Hidehiro Taniguchi et al. / Furukawa Electric Co., Ltd. (Tokyo, JP)
A semiconductor laser element comprising:…

Semiconductor Laser Manufacturing Method and Semiconductor Laser
US 08599894 B2, Dec. 3, 2013, Shunsuke Nozu / Renesas Electronics Corporation (Kanagawa, JP)
A semiconductor laser manufacturing method comprising:…

Single-Frequency Distributed Feedback Laser Diode With Complex-Coupling Coefficient and Transparent Conductive Cladding Layer
US 08548022 B2, Oct. 1, 2013, Nuditha Vibhavie Amarasinghe et al.
A single frequency complex-coupled distributed feedback semiconductor laser…

Surface Emitting Laser Diode, Optical Scanning Apparatus and Image Forming Apparatus
US 08774242 B2, July 8, 2014, Shunichi Sato et al. / Ricoh Company, Ltd. (Tokyo, JP)
A surface emitting laser diode comprising:…

Surface Emitting Laser Element
US 08855157 B2, Oct. 7, 2014, Yu Higuchi / Nichia Corporation (Anan-shi, JP)
A surface emitting laser element comprising:…

Patentorg has 33 documents under Particular Confinement Layer Patents.

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