Featured patents

Method of Programming Nonvolatile Memory
US 08837219 B2, Sept. 16, 2014, Program gate, Kai-Yuan Hsiao et al. / eMemory Technology Inc. (Hsinchu Science Park, Hsin-Chu, TW)
A programming method for use in memory, each memory cell of a plurality of memory…

Two Capacitor Self-Referencing Nonvolatile Bitcell
US 08817520 B2, Aug. 26, 2014, Ferroelectric, Sudhanshu Khanna et al. / Texas Instruments Incorporated (Dallas, US)
A system on chip (SoC) comprising:…

Leakage Reduction in Memory Devices
US 08780658 B2, July 15, 2014, Precharge, Nan Chen et al. / QUALCOMM Incorporated (San Diego, US)
A memory device comprising:…

Semiconductor Memory Devices With a Power Supply
US 08743646 B2, June 3, 2014, Powering, Tae-Joong Song / Samsung Electronics Co., Ltd. (Suwon-Si, Gyeonggi-Do, KR)
A semiconductor device comprising:…

Semiconductor Memory Device
US 08687452 B2, April 1, 2014, Powering, Hiroshi Kishibe / Renesas Electronics Corporation (Kanagawa, JP)
A semiconductor memory device comprising:…

Refreshing Memristive Systems
US 08675391 B2, March 18, 2014, Resistive, Gregory Stuart Snider / Hewlett-Packard Development Company, L.P. (Houston, US)
A method for operating a circuit containing memristive devices, the method…

Sense Amplifier Latch With Integrated Test Data Multiplexer
US 08553481 B2, Oct. 8, 2013, Flip-flop used for sensing, Daniel C. Chow / Apple Inc. (Cupertino, US)
An apparatus, comprising:…

Controlling AC Disturbance While Programming
US 08559255 B2, Oct. 15, 2013, Precharge, Yugi Mizuguchi et al. / Spansion LLC (Sunnyvale, US)
A system that facilitates operation of memory, comprising:…

Resistance Change Type Memory
US 08503216 B2, Aug. 6, 2013, Resistive, Takeshi Kajiyama / Kabushiki Kaisha Toshiba (Tokyo, JP)
A resistance change type memory comprising:…

Single Transistor Driver for Address Lines in a Phase Change Memory and Switch (PCMS) Array
US 08462577 B2, June 11, 2013, Particular decoder or driver circuit, Raymond W. Zeng et al. / Intel Corporation (Santa Clara, US)
A method for programming a non-volatile memory cell, comprising:…

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