Featured patents

Partial Block Erase Architecture for Flash Memory
US 08842472 B2, Sept. 23, 2014, Error correction, Jin-Ki Kim / Conversant Intellectual Property Management Inc. (Ottawa, Ontario, CA)
A method for wear leveling control in a memory device having a memory bank…

Semiconductor Memory Device and Access Method Thereof
US 08854916 B2, Oct. 7, 2014, Common read and write mode signal, Hyun-Jin Kim et al. / Samsung Electronics Co., Ltd. (Suwon-Si, Gyeonggi-Do, KR)
A method of accessing memory banks in a cell array, the cell array including…

Semiconductor Memory Device Including Mode Register Set and Method for Operating the Same
US 08817573 B2, Aug. 26, 2014, Initiating signal, Kie-Bong Ku / Hynix Semiconductor Inc. (Gyeonggi-do, KR)
A semiconductor memory device, comprising:…

Access Line Dependent Biasing Schemes
US 08730734 B2, May 20, 2014, Particular biasing, Dzung H. Nguyen / Micron Technology, Inc. (Boise, US)
A controller, comprising:…

Semiconductor Memory Device, Method of Controlling Read Preamble Signal Thereof, and Data Transmission System
US 08605474 B2, Dec. 10, 2013, Associative Memories (Content Addressable Memory-Cam), Atsuo Koshizuka / Elpida Memory, Inc. (Tokyo, JP)
A semiconductor memory device, comprising:…

Wordline Voltage Transfer Apparatus, Systems, and Methods
US 08582390 B2, Nov. 12, 2013, Particular decoder or driver circuit, Xiaojun Yu et al. / Micron Technology, Inc. (Boise, US)
A method comprising:…

Systems and Methods for Operating Multi-Bank Nonvolatile Memory
US 08593866 B2, Nov. 26, 2013, Bank or block architecture, Robert Jackson et al. / SanDisk Technologies Inc. (Plano, US)
A method of operating a multi-bank nonvolatile memory system that has a plurality…

Anti-Fuse Circuit and Integrated Circuit Including the Same
US 08472234 B2, June 25, 2013, Capacitative, Keon Yoo / Hynix Semiconductor Inc. (Icheon, KR)
An anti-fuse circuit comprising:…

Semiconductor Memory Devices Having Redundancy Arrays
US 08477546 B2, July 2, 2013, Bad bit, Kye-hyun Kyung / Samsung Electronics Co., Ltd. (Gyeonggi-do, KR)
A semiconductor memory device including a plurality of memory areas, each…

Multiplexing Circuit for High-Speed, Low Leakage, Column-Multiplexing Memory Devices
US 08451671 B2, May 28, 2013, Particular read circuit, Yi-Tzu Chen et al. / Taiwan Semiconductor Manufacturing Company, Ltd. TW
A multiplexing circuit comprising:…

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