Featured patents

Semiconductor Memory Apparatus
US 08824216 B2, Sept. 2, 2014, Having particular data buffer or latch, Seung Wook Kwack / SK Hynix Inc. (Gyeonggi-do, KR)
A semiconductor memory apparatus comprising:…

Magnetic Memory With Separate Read and Write Paths
US 08681541 B2, March 25, 2014, Magnetic thin film, Dimitar V. Dimitrov et al. / Seagate Technology LLC (Cupertino, US)
A magnetic memory unit, comprising:…

Ferroelectric Memory Device
US 08665628 B2, March 4, 2014, Ferroelectric, Shoichiro Kawashima / Fujitsu Semiconductor Limited (Yokohama, JP)
A ferroelectric memory device, comprising:…

Substrate Bias During Program of Non-Volatile Storage
US 08638606 B2, Jan. 28, 2014, Logic connection, Guirong Liang et al. / SanDisk Technologies Inc. (Plano, US)
A method of operating non-volatile storage having a plurality of NAND strings…

Semiconductor Memory Device With Memory Cells Each Including a Charge Accumulation Layer and a Control Gate
US 08630106 B2, Jan. 14, 2014, Interconnection Arrangements, Dai Nakamura et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor memory device, comprising:…

Sense Amplifiers, Memories, and Apparatuses and Methods for Sensing a Data State of a Memory Cell
US 08605521 B2, Dec. 10, 2013, Particular read circuit, Daniele Vimercati / Micron Technology, Inc. (Boise, US)
An apparatus, comprising:…

Fusion Memory
US 08559223 B2, Oct. 15, 2013, Particular connection, Daisaburo Takashima / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor memory, comprising:…

Methods of Operating DRAM Devices Having Adjustable Internal Refresh Cycles That Vary in Response to On-Chip Temperature Changes
US 08537633 B2, Sept. 17, 2013, Data refresh, Young-Hun Seo et al. / Samsung Electronics Co., Ltd. KR
A method of operating a dynamic random access memory (DRAM) device, comprising:…

Nonvolatile Semiconductor Memory Device Using MIS Transistor
US 08451657 B2, May 28, 2013, Variable threshold, Tadahiko Horiuchi / NSCore, Inc. (Fukuoka, JP)
A nonvolatile semiconductor memory device, comprising:…

Magnetoresistance Element and Storage Device Using the Same
US 08456896 B2, June 4, 2013, Magnetoresistive, Yasushi Ogimoto et al. / Fuji Electric Co., Ltd. (Kawasaki-shi, JP)
A magnetic memory element, comprising:…

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