Featured patents

Semiconductor Integrated Circuit With Thick Gate Oxide Word Line Driving Circuit
US 08797810 B2, Aug. 5, 2014, Including level shift or pull-up circuit, Hidetaka Natsume et al. / Renesas Electronics Corporation (Kanagawa, JP)
A semiconductor integrated circuit, comprising:…

Independently-Controlled-Gate SRAM
US 08717807 B2, May 6, 2014, Flip-flop (electrical), Pi-Ho Hu et al. / National Chiao Tung University (Hsinchu, TW)
A static random access memory comprising…

Method of Controlling a Refresh Operation of PSRAM and Related Device
US 08717841 B2, May 6, 2014, Data refresh, Shi-Huei Liu et al. / Etron Technology, Inc. (Hsinchu, TW)
A method of controlling a refresh operation of a pseudo-static random access…

High Operating Speed Resistive Random Access Memory
US 08619459 B1, Dec. 31, 2013, Resistive, Sang Nguyen et al. / Crossbar, Inc. (Santa Clara, US)
An electronic memory, comprising:…

Semiconductor Device and Operation Method Thereof
US 08611129 B2, Dec. 17, 2013, Semiconductive, Shigeru Kanematsu et al. / Sony Corporation (Tokyo, JP)
An operation method of a semiconductor device, the method comprising:…

Method of Reading a Ferroelectric Memory Cell
US 08570812 B2, Oct. 29, 2013, Line charging, Sudhir K. Madan / Texas Instruments Incorporated (Dallas, US)
A method of reading a memory cell, comprising:…

Method for Operating an Integrated Circuit Having a Resistivity Changing Memory Cell
US 08531863 B2, Sept. 10, 2013, Resistive, Corvin Liaw et al. / Adesto Technologies Corporation (Sunnyvale, US)
A memory circuit, comprising:…

Device for Generating a Test Pattern of a Memory Chip and Method Thereof
US 08520453 B2, Aug. 27, 2013, Including specified plural element logic arrangement, Chun-Ching Hsia et al. / Etron Technology, Inc. (Hsinchu, TW)
A device for generating a test pattern of a memory chip, the device comprising…

System and Method for Adjusting Read Voltage Thresholds in Memories
US 08508995 B2, Aug. 13, 2013, Error correction, Erez Sabbag et al. / Densbits Technologies Ltd. (Haifa, IL)
A method for adjusting read threshold voltage values, comprising: estimating, by…

Non-Volatile Memory Device and Method for Programming the Device, and Memory System
US 08472247 B2, June 25, 2013, Multiple values, Sung-Won Yun et al. / Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
A non-volatile memory device, comprising:…

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