Featured patents

Memory Components and Controllers That Utilize Multiphase Synchronous Timing References
US 08842492 B2, Sept. 23, 2014, DDR (double data rate) memory, Frederick A. Ware et al. / Rambus Inc. (Sunnyvale, US)
A memory device, comprising:…

Memory Module and Memory System
US 08854854 B2, Oct. 7, 2014, Interconnection Arrangements, Hiroaki Ikeda et al. / PS4 Luxco S.A.R.L. (Luxembourg, LU)
A device comprising:…

Semiconductor Device
US 08824192 B2, Sept. 2, 2014, Capacitors, Masami Endo / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa, JP)
A semiconductor device comprising:…

Semiconductor Device Performing Refresh Operation
US 08873325 B2, Oct. 28, 2014, Data refresh, Kenichi Sakakibara et al. / PS4 Luxco S.A.R.L. (Luxembourg, LU)
A device comprising:…

System and Method to Read a Memory Cell With a Complementary Metal-Oxide-Semiconductor (CMOS) Read Transistor
US 08737117 B2, May 27, 2014, Flip-flop (electrical), Baker S. Mohammad / QUALCOMM Incorporated (San Diego, US)
An apparatus comprising:…

Nonvolatile Memory Device and Related Programming Method
US 08724395 B2, May 13, 2014, Verify signal, Jae-Yong Jeong et al. / Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
A method of programming a nonvolatile memory device, comprising:…

Sense Scheme for Phase Change Material Content Addressable Memory
US 08687398 B2, April 1, 2014, Auxiliary lines, Robert K. Montoye et al. / International Business Machines Corporation (Armonk, US)
A sensing circuit in a Content Addressable Memory (CAM), the sensing circuit…

Driving Circuit for Memory Device
US 08619489 B2, Dec. 31, 2013, Powering, Antonio Conte et al. / STMicroelectronics S.r.l. (Agrate Brianza, IT)
An electrically programmable non-volatile memory device including a plurality…

Test Method for Screening Local Bit-Line Defects in a Memory Array
US 08498168 B2, July 30, 2013, Testing, Yi Fang Chang et al. / Macronix International Co., Ltd. (Hsin-Chu, TW)
A method for detection of a manufacturing defect in a memory array comprising:…

Semiconductor Memory Device and Method of Operating the Same
US 08456907 B2, June 4, 2013, Multiple values, Myung Cho et al. / SK Hynix Inc. (Gyeonggi-do, KR)
A method of operating a semiconductor memory device, comprising:…

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