Featured patents

Delay Circuit, Delay Controller, Memory Controller, and Information Terminal
US 08842485 B2, Sept. 23, 2014, Delay, Daisuke Murakami / Panasonic Corporation (Osaka, JP)
A delay controller comprising:…

Semiconductor Device and Method of Driving Semiconductor Device
US 08848464 B2, Sept. 30, 2014, Particular read circuit, Yusuke Sekine et al. / Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP)
A semiconductor device comprising:…

Magnentic Resistance Memory Apparatus Having Multi Levels and Method of Driving the Same
US 08842466 B2, Sept. 23, 2014, Magnetoresistive, Won Joon Choi / SK Hynix Inc. (Gyeonggi-do, KR)
A magnetic resistance memory apparatus, comprising:…

Resistance Change Memory Cell Circuits and Methods
US 08861259 B2, Oct. 14, 2014, Resistive, Brent Haukness / Rambus Inc. (Sunnyvale, US)
A method of changing a state of a resistive change memory element…

Signal Tracking in Write Operations of Memory Cells
US 08780652 B2, July 15, 2014, Signals, Young Suk Kim et al. / Taiwan Semiconductor Manufacturing Company, Ltd. TW
A method comprising:…

Apparatus for Memory With Improved Performance and Associated Methods
US 08630113 B1, Jan. 14, 2014, Four layer devices, Jeffrey T. Watt et al. / Altera Corporation (San Jose, US)
An integrated circuit (IC), comprising:…

Fuse Circuit and Semiconductor Memory Device Including the Same
US 08599635 B2, Dec. 3, 2013, Having fuse element, Byung-Sik Moon et al. / Samsung Electronics Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
A fuse circuit in a semiconductor memory device, comprising:…

Magnetic Tunnel Junction With Compensation Element
US 08508988 B2, Aug. 13, 2013, Magnetoresistive, Dimitar V. Dimitrov et al. / Seagate Technology LLC (Cupertino, US)
A magnetic tunnel junction, comprising:…

Nonvolatile Semiconductor Memory Device Including Plural Memory Cells and a Dummy Cell Coupled to an End of a Memory Cell
US 08482984 B2, July 9, 2013, Reference signal, Norio Ohtani et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor memory device comprising:…

Semiconductor Memory Device
US 08451654 B2, May 28, 2013, Complementary, Tsuyoshi Koike / Panasonic Corporation (Osaka, JP)
A semiconductor memory device comprising:…

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