Featured patents

Semiconductor Memory Device and Repair Method Thereof
US 08848443 B2, Sept. 30, 2014, Error correction, Saeng-Hwan Kim / Hynix Semiconductor Inc. (Gyeonggi-do, KR)
A method for repairing a semiconductor memory device including a plurality…

Write Command and Write Data Timing Circuit and Methods for Timing the Same
US 08760961 B2, June 24, 2014, Including particular address buffer or latch circuit arrangement, Jason Brown et al. / Micron Technology, Inc. (Boise, US)
An apparatus, comprising:…

Semiconductor Memory Device
US 08711632 B2, April 29, 2014, Reference signal, Akira Katayama / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor memory device comprising:…

Volatile Memory Elements With Soft Error Upset Immunity
US 08675398 B2, March 18, 2014, Complementary, Bruce B. Pedersen / Altera Corporation (San Jose, US)
A method for operating a memory element that includes a first inverting circuit…

Current Leakage Reduction
US 08614927 B2, Dec. 24, 2013, Testing, Wei-Li Liao et al. / Taiwan Semiconductor Manufacturing Company, Ltd. TW
A circuit comprising:…

Semiconductor Memory Device and Method for Operating the Same
US 08531906 B2, Sept. 10, 2013, Plural blocks or banks, Mun-Phil Park et al. / SK Hynix Inc. (Gyeonggi-do, KR)
A semiconductor memory device, comprising:…

Semiconductor Memory Device and Method for Performing Data Compression Test of the Same
US 08547764 B2, Oct. 1, 2013, Testing, Hee-Jin Byun et al. / Hynix Semiconductor Inc. (Gyeonggi-do, KR)
A semiconductor memory device comprising:…

Internal Signal Generator for Use in Semiconductor Memory Device
US 08483005 B2, July 9, 2013, Including particular address buffer or latch circuit arrangement, Beom-Ju Shin / Hynix Semiconductor Inc. (Gyeonggi-do, KR)
A semiconductor memory device, comprising:…

Semiconductor Device
US 08482991 B2, July 9, 2013, Having particular data buffer or latch, Ken Shibata et al. / Renesas Electronics Corporation (Kawasaki-shi, JP)
A semiconductor memory device, comprising:…

Memory and Method for Sensing Data in a Memory Using Complementary Sensing Scheme
US 08456935 B2, June 4, 2013, Precharge, Bradford L. Hunter et al. / Freescale Semiconductor, Inc. (Austin, US)
A memory comprising:…

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