Featured patents

Analog Circuit and Display Device and Electronic Device
US 08836420 B2, Sept. 16, 2014, Combined With Automatic Amplifier Disabling Switch Means, Hajime Kimura / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
An electronic device comprising:…

Programmable Gain Amplifier With Amplifier Common Mode Sampling System
US 08791754 B2, July 29, 2014, With Periodic Switching Input-Output, Colin G. Lyden et al. / Analog Devices, Inc. (Norwood, US)
A programmable gain amplifier (“PGA”), comprising:…

Power Amplification Apparatus
US 08803613 B2, Aug. 12, 2014, Including frequency-responsive means in the signal transmission path, Ryo Mochizuki / Kabushiki Kaisha Toshiba (Minato-Ku, Tokyo, JP)
A power amplification apparatus comprising:…

RF Device With Compensatory Resonator Matching Topology
US 08717102 B2, May 6, 2014, Including frequency-responsive means in the signal transmission path, Richard Wilson et al. / Infineon Technologies AG (Neubiberg, DE)
An amplifier circuit, comprising:…

Active Neutralization Device
US 08669813 B2, March 11, 2014, Having compensation for interelectrode impedance, Stéphane Bouyat / Thales (Neuilly-sur-Seine, FR)
Device for neutralization of a signal obtained by transposition to a high…

Pseudo-Envelope Follower Power Management System With High Frequency Ripple Current Compensation
US 08633766 B2, Jan. 21, 2014, With Control of Power Supply or Bias Voltage, Nadim Khlat et al. / RF Micro Devices, Inc. (Greensboro, US)
A pseudo-envelope follower power management system with high frequency ripple…

Power Amplifier Pre-Distortion
US 08618880 B2, Dec. 31, 2013, Hum or Noise or Distortion Bucking Introduced Into Signal Channel, Christopher Young et al. / Broadcom Corporation (Irvine, US)
A power amplifier pre-distortion method in a MIMO system, the method comprising:…

Three-Stage GaN HEMT Doherty Power Amplifier for High Frequency Applications
US 08466746 B2, June 18, 2013, Including plural amplifier channels, Sang Ho Kam et al. / Postech Academy-Industry Foundation (Pohang-Si, Gyeongsangbuk-Do, KR)
A three-stage GaN HEMT Doherty power amplifier for high frequency applications,…

Regulator Circuit
US 08456235 B2, June 4, 2013, Having field effect transistor, Suguru Tachibana et al. / Fujitsu Semiconductor Limited (Yokohama, JP)
A regulator circuit comprising:…

Anti-Pop Circuit
US 08446216 B2, May 21, 2013, Combined With Automatic Amplifier Disabling Switch Means, Xin Fan et al. / Conexant Systems, Inc. (Newport Beach, US)
A reduced pop amplifier comprising:…

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