Featured patents

Vertical BJT and SCR for ESD
US 08809905 B2, Aug. 19, 2014, Device protection, Wun-Jie Lin et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
An electrostatic discharge (ESD) protection device, comprising:…

Nanotube Semiconductor Devices
US 08729601 B2, May 20, 2014, With extended latchup current level, Hong Chang et al. / Alpha and Omega Semiconductor Incorporated (Sunnyvale, US)
A semiconductor device comprising:…

Two-Color Infrared Detector
US 08723161 B1, May 13, 2014, Superlattice, John F. Klem et al. / Sandia Corporation (Albuquerque, US)
A two-color detector comprising:…

Semiconductor Device and Method of Manufacturing a Semiconductor Device
US 08643121 B2, Feb. 4, 2014, With gate electrode of controlled workfunction material, Raghunath Singanamalla et al. / Taiwan Semiconductor Manufacturing Co., Ltd. (Hsin-Chu, TW)
A semiconductor device comprising:…

Semicondutor Isolation Structure
US 08633564 B2, Jan. 21, 2014, Including dielectric isolation means, Kamal Karda et al. / Micron Technology, Inc. (Boise, US)
An isolation structure comprising:…

Crystalline Aluminum Carbide Thin Film, Semiconductor Substrate Having the Aluminum Carbide Thin Film Formed Thereon and Method of Fabricating the Same
US 08624291 B2, Jan. 7, 2014, With particular semiconductor material, Shiro Sakai / Seoul Opto Device Co., Ltd. (Ansan-si, KR)
A crystalline aluminum carbide (AlC) thin film configured to emit light…

Grooved Plate for Improved Solder Bonding
US 08587019 B2, Nov. 19, 2013, With housing or contact structure, Zequn Mei et al. / LedEngin, Inc. (San Jose, US)
A printed circuit board for bonding to an emitter substrate supporting light…

System With Logic and Embedded MIM Capacitor
US 08587046 B2, Nov. 19, 2013, Insulated gate capacitor or insulated gate transistor combined with capacitor, Jeong Y Choi / MoSys, Inc. (Santa Clara, US)
A semiconductor structure built upon a substrate comprising:…

Trench MOSFET With Trenched Floating Gates in Termination
US 08564052 B2, Oct. 22, 2013, Gate electrode in groove, Fu-Yuan Hsieh / Force MOS Technology Co., Ltd. (New Taipei, TW)
A trench MOSFET with a plurality of transistor cells in active area and multiple…

Non-Volatile Memory and Fabricating Method Thereof
US 08502297 B2, Aug. 6, 2013, With additional contacted control electrode, Ya-Jui Lee et al. / Powerchip Technology Corporation (Hsinchu, TW)
A non-volatile memory, comprising:…

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