Featured patents

Zener Diode in a SiGe BiCMOS Process and Method of Fabricating the Same
US 08829650 B2, Sept. 9, 2014, Avalanche Diode, Wensheng Qian et al. / Shanghai Hua Hong Nec Electronics Co., Ltd. (Shanghai, CN)
A zener diode in a silicon-germanium (SiGe) bipolar complementary metal oxide…

Electrically Pixelated Luminescent Device
US 08754425 B2, June 17, 2014, Plural light emitting devices, Nicole J. Wagner et al. / 3M Innovative Properties Company (Saint Paul, US)
An electrically driven pixelated lumination device (EPLD) comprising:…

Semiconductor Device and Method of Forming the Same
US 08742494 B2, June 3, 2014, Gate electrode in groove, Nan Wu
A semiconductor device comprising:…

Silicon Carbide Semiconductor Device
US 08729567 B2, May 20, 2014, Diamond or silicon carbide, Shunsuke Yamada et al. / Sumitomo Electric Industries, Ltd. (Osaka-shi, JP)
A silicon carbide semiconductor device comprising:…

Integrated Semiconductor Device Having an Insulating Structure and a Manufacturing Method
US 08749018 B2, June 10, 2014, Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit, Birgit von Ehrenwall et al. / Infineon Technologies AG (Neubiberg, DE)
An integrated semiconductor device, comprising:…

Electronic Device Including Electrically Conductive Body for ESD Protection and Related Methods
US 08674446 B2, March 18, 2014, With overvoltage protective means, Andrew Mui et al. / Harris Corporation (Melbourne, US)
An electronic device comprising:…

Light Emitting Diode, Light Emitting Diode Lamp, and Lighting Apparatus
US 08643023 B2, Feb. 4, 2014, Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp or Gaalas, Ryouichi Takeuchi et al. / Showa Denko K.K. (Tokyo, JP)
A light-emitting diode comprising:…

Packaged Semiconductor Chips With Array
US 08653644 B2, Feb. 18, 2014, With contact or lead, Andrey Grinman et al. / Tessera, Inc. (San Jose, US)
A chip-sized, wafer level packaged device comprising:…

Electronic Device and Method for Manufacturing Same
US 08653519 B2, Feb. 18, 2014, Non-Single Crystal, or Recrystallized, Semiconductor Material Forms Part of Active Junction (Including Field-Induced Active Junction), Tsutomu Ichihara et al. / Panasonic Corporation (Osaka, JP)
An electronic device, comprising:…

Fin Transistor Structure and Method of Fabricating the Same
US 08445973 B2, May 21, 2013, With specified physical layout, Zhijiong Luo et al. / Institute of Microelectronics, Chinese Academy of Sciences (Beijing, CN)
A fin transistor structure, comprising:…

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