Featured patents

Nanorod Light Emitting Device and Method of Manufacturing the Same
US 08847199 B2, Sept. 30, 2014, Incoherent light emitter, Sam-Mook Kang et al. / Samsung Electronics Co., Ltd. (Suwon-Si, Gyeonggi-Do, KR)
A nanorod light emitting device, comprising:…

Light Emitting Diode
US 08803178 B2, Aug. 12, 2014, With reflector, opaque mask, or optical element integral with device or device enclosure or package, Jun Zhu et al. / Tsinghua University (Beijing, CN)
A light emitting diode comprising:…

Semiconductor Device, Polycrystalline Semiconductor Thin Film, Process for Producing Polycrystalline Semiconductor Thin Film, Field Effect Transistor, and Process for Producing Field Effect Transistor
US 08779419 B2, July 15, 2014, Semiconductor Is an Oxide of a Metal or Copper Sulfide, Koki Yano et al. / Idemitsu Kosan Co., Ltd. (Tokyo, JP)
A semiconductor device which uses a crystalline oxide as a semiconductor,…

Non-Volatile Semiconductor Storage Device and Manufacturing Method of Non-Volatile Semiconductor Storage Device
US 08766226 B2, July 1, 2014, Bulk effect switching in amorphous material, Yasuhiro Nojiri / Kabushiki Kaisha Toshiba (Tokyo, JP)
A non-volatile semiconductor storage device comprising:…

Elliptical Through Silicon Vias for Active Interposers
US 08742477 B1, June 3, 2014, With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate, Bahareh Banijamali / Xilinx, Inc. (San Jose, US)
An integrated circuit structure comprising:…

Three Dimensional Memory Array Architecture
US 08729523 B2, May 20, 2014, In array, Federico Pio / Micron Technology, Inc. (Boise, US)
A three dimensional memory array, comprising:…

Luminescent Device and Method of Producing the Same
US 08698151 B2, April 15, 2014, In array having structure for use as imager or display, or with transparent electrode, Mitsuru Sawano / FUJIFILM Corporation (Tokyo, JP)
An electroluminescent device comprising:…

Semiconductor Device Having First Gate Electrode and Second Gate Electrode
US 08674360 B2, March 18, 2014, Field effect device in amorphous semiconductor material, Yutaka Okazaki / Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP)
A semiconductor device comprising:…

Nickel-Silicide Formation With Differential Pt Composition
US 08637925 B2, Jan. 28, 2014, Gate electrode in groove, Andrew Simon et al. / International Business Machines Corporation (Armonk, US)
A field-effect-transistor (FET), comprising:…

Information Recording/Reproducing Device
US 08581424 B2, Nov. 12, 2013, Alignment Marks, Takayuki Tsukamoto et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
An information recording/reproducing device comprising:…

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