Featured patents

NVM Bitcell With a Replacement Control Gate and Additional Floating Gate
US 08829588 B2, Sept. 9, 2014, With additional contacted control electrode, Andrew E. Horch / Synopsys, Inc. (Mountain View, US)
A non-volatile memory bitcell comprising:…

Dichromatic Photodiodes
US 08816461 B2, Aug. 26, 2014, With different sensor portions responsive to different wavelengths, Rengarajan Sudharsanan et al. / The Boeing Company (Chicago, US)
A dichromatic photodiode comprising:…

Micro Electro Mechanical Device and Manufacturing Method Thereof
US 08759887 B2, June 24, 2014, Physical deformation, Mayumi Yamaguchi et al. / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A micro electro mechanical device comprising:…

Flexible Heat Sink With Lateral Compliance
US 08736048 B2, May 27, 2014, For integrated circuit, Mark D. Schultz / International Business Machines Corporation (Armonk, US)
A multi-chip module (MCM) structure comprising more than one semiconductor chip…

Soft Lithography Microlens Fabrication and Array for Enhanced Light Extraction From Organic Light Emitting Diodes (OLEDs)
US 08742406 B1, June 3, 2014, Organic Semiconductor Material, Joong-Mok Park et al. / Iowa State University Research Foundation, Inc. (Ames, US)
A light emitting device, comprising:…

Display Device and Fabrication Method for Display Device
US 08664671 B2, March 4, 2014, Plural light emitting devices, Kenichi Tajika et al. / Panasonic Corporation (Osaka, JP)
A display device, comprising:…

Mask-Less and Implant Free Formation of Complementary Tunnel Field Effect Transistors
US 08614468 B2, Dec. 24, 2013, Having insulated electrode, Mark van Dal et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A device comprising:…

Nonvolatile Memory Device and Method for Manufacturing Same
US 08569731 B2, Oct. 29, 2013, With specified electrode composition or configuration, Takuya Konno et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A nonvolatile memory device comprising:…

Structure and Process for Metal Fill in Replacement Metal Gate Integration
US 08519454 B2, Aug. 27, 2013, Having insulated electrode, Dechao Guo et al. / International Business Machines Corporation (Armonk, US)
A method comprising:…

Thin-Film Transistor and Intermediate of Thin-Film Transistor
US 08502285 B2, Aug. 6, 2013, Having insulated electrode, Satoru Mori et al. / Mitsubishi Materials Corporation (Tokyo, JP)
A thin-film transistor comprising:…

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