Featured patents

Semiconductor Memory Device
US 08796663 B2, Aug. 5, 2014, With specified electrode composition or configuration, Nobuaki Yasutake / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor memory device, comprising memory cells disposed between a first…

Semiconductor Device With a Semiconductor Chip Connected in a Flip Chip Manner
US 08754535 B2, June 17, 2014, Flip chip, Osamu Miyata et al. / Rohm Co., Ltd. (Kyoto, JP)
A semiconductor device, comprising:…

Carbon-Based Memory Element
US 08754392 B2, June 17, 2014, Bulk effect switching in amorphous material, Daniele Caimi et al. / International Business Machines Corporation (Armonk, US)
A method comprising:…

Semiconductor Multichip Module Package With Improved Thermal Performance; Reduced Size and Improved Moisture Resistance
US 08629566 B2, Jan. 14, 2014, Flip chip, Chuan Cheah et al. / International Rectifier Corporation (El Segundo, US)
An MCM device comprising a flat thin insulation substrate having parallel top…

Micro-Bead Blasting Process for Removing a Silicone Flash Layer
US 08610153 B1, Dec. 17, 2013, With reflector, opaque mask, or optical element integral with device or device enclosure or package, R. Scott West et al. / Bridgelux, Inc. (Livermore, US)
A method, comprising:…

Structure and Method for a Transformer With Magnetic Features
US 08610247 B2, Dec. 17, 2013, Including inductive element, Huan-Neng Chen et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A semiconductor device, comprising:…

Self-Limiting Oxygen Seal for High-K Dielectric and Design Structure
US 08564074 B2, Oct. 22, 2013, Composite or layered gate insulator, Chendong Zhu et al. / International Business Machines Corporation (Armonk, US)
A semiconductor substrate comprising:…

Semiconductor Light Emission Device for Preventing a Regional Concentration Phenomenon of a Current Flow and Improving the Reliability
US 08525150 B2, Sept. 3, 2013, Incoherent light emitter, Min Ki Yoo et al. / LG Display Co., Ltd. (Seoul, KR)
A semiconductor light emission device comprising:…

Transistor and Method for Forming the Same
US 08507958 B2, Aug. 13, 2013, Having insulated electrode, Zhijong Luo et al. / Institute of Microelectronics, Chinese Academy of Sciences (Beijing, CN)
A transistor comprising:…

Multilayer Wiring, Semiconductor Device, Substrate for Display Device, and Display Device
US 08446010 B2, May 21, 2013, Multiple metal levels on semiconductor, separated by insulating layer, Hiroyuki Moriwaki / Sharp Kabushiki Kaisha (Osaka, JP)
A multilayer wiring comprising:…

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