Featured patents

Crystal Producing Apparatus, Crystal Producing Method, Substrate Producing Method, Gallium Nitride Crystal, and Gallium Nitride Substrate
US 08829530 B2, Sept. 9, 2014, Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp or Gaalas, Seiji Sarayama et al. / Ricoh Company, Ltd. (Tokyo, JP)
A method for producing a columnar-shaped group-III nitride crystal, the method…

Semiconductor Integrated Circuit
US 08759883 B2, June 24, 2014, With particular chip input / output means, Masato Maede et al. / Panasonic Corporation (Osaka, JP)
A semiconductor integrated circuit device, comprising:…

Pinch-Off Control of Gate Edge Dislocation
US 08723266 B2, May 13, 2014, Insulated gate field effect transistor in integrated circuit, Tsan-Chun Wang et al. / Taiwan Semiconductor Manufacturing Company, Ltd. TW
A semiconductor device, comprising:…

Wireless Communication Devices With In-Package Integrated Passive Components
US 08581362 B2, Nov. 12, 2013, Passive components in ICs, Kosmas-Christos Tsilipanos et al. / Broadcom Corporation (Irvine, US)
An integrated circuit (IC) package, comprising:…

Semiconductor Structure and Method for Making Same
US 08592883 B2, Nov. 26, 2013, Stacked capacitor, Detlef Wilhelm et al. / Infineon Technologies AG (Neubiberg, DE)
A semiconductor structure, comprising:…

Resistance Variable Memory Cells and Methods
US 08546778 B2, Oct. 1, 2013, Bulk Effect Device, Federica Zanderigo et al. / Micron Technology, Inc. (Boise, US)
A resistance variable memory cell, comprising:…

Semiconductor Device and Method of Manufacturing the Same
US 08546783 B2, Oct. 1, 2013, With specified electrode composition or configuration, Masahiro Moniwa et al. / Renesas Electronics Corporation (Kawasaki-shi, JP)
A semiconductor device comprising:…

SOI Device With DTI and STI
US 08525292 B2, Sept. 3, 2013, Dielectric in groove, Bruce B. Doris et al. / International Business Machines Corporation (Armonk, US)
An SOI structure comprising:…

Group III Nitride Semiconductor and Group III Nitride Semiconductor Structure
US 08476639 B2, July 2, 2013, Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp or Gaalas, Tae Hyung Kim et al. / Samsung Electronics Co., Ltd. (Suwon-Si, KR)
A group III nitride semiconductor including a first surface having a group III…

ESD Diode With PSD Partially Overlying P-Epi Circumferential of PSD
US 08455950 B2, June 4, 2013, With overvoltage protective means, Ming-Yeh Chuang / Texas Instruments Incorporated (Dallas, US)
An electrostatic discharge diode structure in an integrated circuit comprising:…

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