Featured patents

Chip Package and Package Wafer With a Recognition Mark, and Method for Forming the Same
US 08779557 B2, July 15, 2014, With peripheral feature due to separation of smaller semiconductor chip from larger wafer, Po-Shen Lin et al.
A chip package, comprising:…

Optoelectronic Device With Light Directing Arrangement and Method of Forming the Arrangement
US 08729582 B2, May 20, 2014, With reflector, opaque mask, or optical element integral with device or device enclosure or package, Alfons Willi Bogalecki et al. / Insiava (Pty) Limited (Pretoria, ZA
A light emitting device comprising a body having a surface, a region…

Light Emitting Device and Methods for Forming the Same
US 08659045 B2, Feb. 25, 2014, With housing or contact structure, Yu-Chu Li et al. / Huga Optotech Inc. (Taichung, TW)
A light emitting device, comprising:…

Light Emitting Diode
US 08669577 B2, March 11, 2014, With reflector, opaque mask, or optical element integral with device or device enclosure or package, HyunSeoung Ju et al. / LG Innotek Co., Ltd. (Seoul, KR)
A light emitting diode, comprising:…

Semiconductor Device Having First and Second Resistance for Suppressing Loop Oscillation
US 08633527 B2, Jan. 21, 2014, Insulated gate capacitor or insulated gate transistor combined with capacitor, Masaaki Nishijima / Panasonic Corporation (Osaka, JP)
A semiconductor device, comprising:…

Semiconductor Device Having Vertical MOS Transistor and Method for Manufacturing the Semiconductor Device
US 08569830 B2, Oct. 29, 2013, Gate controls vertical charge flow portion of channel, Yu Kosuge et al. / Elpida Memory, Inc. (Tokyo, JP)
A semiconductor device including a vertical MOS (metal-oxide semiconductor)…

Method of Fabricating Polysilicon, Thin Film Transistor, Method of Fabricating the Thin Film Transistor, and Organic Light Emitting Diode Display Device Including the Thin Film Transistor
US 08507914 B2, Aug. 13, 2013, Field effect device in non-single crystal, or recrystallized, Semiconductor material, Dong-Hyun Lee et al. / Samsung Display Co., Ltd. (Yongin, KR)
A thin film transistor, comprising:…

Semiconductor Device
US 08502306 B2, Aug. 6, 2013, Gate electrode in groove, Kazuaki Yamaura / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor device comprising a semiconductor substrate and a first…

Package Module Structure for High Power Device With Metal Substrate and Method of Manufacturing the Same
US 08497586 B2, July 30, 2013, Encapsulated, Kyoung-Min Kim et al. / Lumens Co., Ltd. (Gyeonggi-Do, KR)
A method of manufacturing a package module structure of a high power device using…

Electrostatic Discharge Protection Device and Method for Fabricating the Same
US 08476672 B2, July 2, 2013, Having only two terminals and no control electrode (gate), e.g., Shockley diode, Ru Huang et al. / Peking University (Beijing, CN)
An ESD protection device comprising an SCR structure which is a transverse PNPN…

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