Featured patents

Complementary Metal-Oxide-Semiconductor (CMOS) Device and Method
US 08847315 B2, Sept. 30, 2014, Single crystal semiconductor layer on insulating substrate (SOI), Xia Li et al. / QUALCOMM Incorporated (San Diego, US)
A complementary metal-oxide-semiconductor (CMOS) device comprising:…

Fin-Based Adjustable Resistor
US 08836032 B2, Sept. 16, 2014, Depletion mode field effect transistor, Xiangdong Chen et al. / Broadcom Corporation (Irvine, US)
A fin-based adjustable resistor, said fin-based adjustable resistor comprising:…

Heat Spreader Structures in Scribe Lines
US 08860208 B2, Oct. 14, 2014, With provision for cooling the housing or its contents, Hsien-Wei Chen et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
An integrated circuit structure comprising:…

Semiconductor Device and Method for Manufacturing the Same
US 08704374 B2, April 22, 2014, Multiple metal levels on semiconductor, separated by insulating layer, Yumi Hayashi / Kabushiki Kaisha Toshiba (Tokyo, JP)
A semiconductor device comprising:…

LED Structure With Enhanced Mirror Reflectivity
US 08686429 B2, April 1, 2014, Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp or Gaalas, Michael Bergmann et al. / Cree, Inc. (Durham, US)
An LED chip, comprising:…

Three-Dimensional Memory Device Incorporating Segmented Array Line Memory Array
US 08659028 B2, Feb. 25, 2014, Plural recrystallized semiconductor layers, Luca G. Fasoli et al. / SanDisk 3D LLC (Milpitas, US)
A monolithic integrated circuit comprising:…

Mechanisms for Forming Copper Pillar Bumps
US 08659155 B2, Feb. 25, 2014, Ball shaped, Ming-Che Ho et al. / Taiwan Semiconductor Manufacturing Company, Ltd. TW
A bump structure on a substrate, comprising:…

Z 2 FET Field-Effect Transistor With a Vertical Subthreshold Slope and With No Impact Ionization
US 08581310 B2, Nov. 12, 2013, Junction field effect transistor (unipolar transistor), Jing Wan et al. / Commissariat a l'Energie Atomique et aux Energies Alternatives (Paris, FR)
Field-effect transistor comprising:…

Organic Light Emitting Display Device and Method of Manufacturing the Same
US 08592818 B2, Nov. 26, 2013, In combination with capacitor element, Sun Park et al. / Samsung Display Co., Ltd. (Yongin, Gyeonggi-Do, KR)
An organic light-emitting display device, comprising:…

Light Emitting Device Having a Pluralilty of Light Emitting Cells and Package Mounting the Same
US 08536612 B2, Sept. 17, 2013, With housing or contact structure, Chung Hoon Lee et al. / Seoul Opto Device Co., Ltd. (Ansan-si, KR)
A light emitting diode package, comprising:…

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