Featured patents

High Voltage Bipolar Transistor and Method of Fabrication
US 08847359 B2, Sept. 30, 2014, With non-planar semiconductor surface, Philipp Steinmann et al. / Texas Instruments Incorporated (Dallas, US)
A method of forming an integrated circuit, comprising:…

Optoelectronic Semiconductor Chip and Method for Fabricating an Optoelectronic Semiconductor Chip
US 08829560 B2, Sept. 9, 2014, With housing or contact structure, Wolfgang Schmid et al. / OSRAM Opto Semiconductors GmbH (Regensburg, DE)
An optoelectronic semiconductor chip, comprising:…

Three Dimensional Memory and Methods of Forming the Same
US 08803214 B2, Aug. 12, 2014, Variable threshold, Sanh D. Tang et al. / Micron Technology, Inc. (Boise, US)
An apparatus comprising:…

Light-Emitting Device and Method for Manufacturing Same
US 08803159 B2, Aug. 12, 2014, Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp or Gaalas, Tomohisa Kishimoto et al. / Nichia Corporation (Anan-Shi, JP)
A light-emitting device comprising…

Monolithic Three-Dimensional Semiconductor Device and Structure
US 08754533 B2, June 17, 2014, Chip mounted on chip, Zvi Or-Bach et al. / Monolithic 3D Inc. (San Jose, US)
A semiconductor device comprising:…

Nonvolatile Semiconductor Memory Device and Method for Manufacturing Same
US 08735965 B2, May 27, 2014, Multiple insulator layers, Mitsuru Sato et al. / Kabushiki Kaisha Toshiba (Tokyo, JP)
A nonvolatile semiconductor memory device comprising:…

Epoxy Resin Composition for Semiconductor Encapsulation
US 08729715 B2, May 20, 2014, With specified encapsulant, Naoya Sugimoto et al. / Nitto Denko Corporation (Osaka, JP)
An epoxy resin composition for semiconductor encapsulation, comprising…

Semiconductor Device Used for Adjustment of Output of a Hall Element
US 08629521 B2, Jan. 14, 2014, Differential output, Yuuhei Mouri et al. / ON Semiconductor Trading, Ltd. (Hamilton, BM)
A semiconductor device comprising:…

Oxide Thin Film Transistor and Method of Fabricating the Same
US 08604470 B2, Dec. 10, 2013, Semiconductor Is an Oxide of a Metal or Copper Sulfide, Dae-Hwan Kim et al. / LG Display Co., Ltd (Seoul, KR)
A method for fabricating an oxide thin film transistor (TFT), the method…

Reducing Delamination Between an Underfill and a Buffer Layer in a Bond Structure
US 08610267 B2, Dec. 17, 2013, Bump leads, Chang-Pin Huang et al. / Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu, TW)
A device comprising:…

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