Featured patents

Photomask Blank, Processing Method, and Etching Method
US 08858814 B2, Oct. 14, 2014, Masking of a Substrate Using Material Resistant to an Etchant, Yoshio Kawai et al. / Shin-Etsu Chemical Co., Ltd. (Tokyo, JP)
A photomask blank comprising:…

Methods for Optimizing a Plasma Process
US 08741164 B2, June 3, 2014, By optical means or of an optical property, Sangwuk Park et al. / Samsung Electronics Co., Ltd. KR
A method for controlling a plasma process, comprising:…

Method and System for Imaging a Cross Section of a Specimen
US 08709269 B2, April 29, 2014, Using ion beam, ultraviolet, or visible light, Dror Shemesh / Applied Materials Israel, Ltd. (Rehovot, IL)
A method for obtaining an image of a cross section of a specimen, the method…

Method of Detecting Contamination of Titanium Alloys of Two-Phase Type Having an Alpha and a Beta Phase
US 08691105 B2, April 8, 2014, Nongaseous Phase Etching of Substrate, Gilles Berthod / SNECMA (Paris, FR)
A method of examining a titanium alloy, the method comprising:…

Laser Processing Method
US 08685269 B2, April 1, 2014, Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant, Hideki Shimoi et al. / Hamamatsu Photonics K.K. (Hamamatsu-shi, Shizuoka, JP)
A laser processing method of converging laser light into an object to be…

Systems and Methods for Electrical Contacts to Arrays of Vertically Aligned Nanorods
US 08617407 B2, Dec. 31, 2013, Forming or Treating Electrical Conductor Article, Christian G. Van de Walle et al. / Palo Alto Research Center Incorporated (Palo Alto, US)
A method of fabricating a nanorod device, comprising:…

Method for Processing Substrate and Method for Producing Liquid Ejection Head and Substrate for Liquid Ejection Head
US 08597529 B2, Dec. 3, 2013, Forming or Treating Thermal Ink Jet Article, Hiroyuki Morimoto et al. / Canon Kabushiki Kaisha (Tokyo, JP)
A method for processing a substrate, the method comprising:…

Method for Making a Cavity in the Thickness of a Substrate Which May Form a Site for Receiving a Component
US 08470184 B2, June 25, 2013, Etching of Semiconductor Material to Produce an Article Having a Nonelectrical Function, Sebastien Bolis et al. / Commissariat a l'energie atomique et aux energies alternatives (Paris, FR)
A method for making a micro device including at least one cavity, formed…

Method for Removing Copper Oxide Layer
US 08444868 B2, May 21, 2013, Gas Phase Etching of Substrate, Huilong Zhu et al. / International Business Machines Corporation (Armonk, US)
A method for removing copper oxide from a copper surface to provide a clean…

Method for Fabricating Patterns on a Wafer Through an Exposure Process
US 08444867 B2, May 21, 2013, Masking of a Substrate Using Material Resistant to an Etchant, Hyun Jo Yang / Hynix Semiconductor Inc. (Icheon-si, KR)
A method for forming patterns on a wafer, comprising:…

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