Featured patents

Grown Nanofin Transistors
US 08734583 B2, May 27, 2014, Epitaxy formation, Leonard Forbes / Micron Technology, Inc. (Boise, US)
A method for forming a transistor, comprising:…

Selected Methods for Efficiently Making Thin Semiconductor Bodies From Molten Material for Solar Cells and the Like
US 08696810 B2, April 15, 2014, Having pulling during growth, Ralf Jonczyk et al. / 1366 Technologies, Inc. (Bedford, US)
A method for fabricating a semi-conductor body, the method comprising the steps…

Procedure for In-Situ Determination of Thermal Gradients at the Crystal Growth Front
US 08673075 B2, March 18, 2014, Seed pulling, Keiichi Takanashi et al. / Sumco Phoenix Corporation (Phoenix, US)
A semiconductor crystal growth apparatus comprising:…

Method and Apparatus for Crystal Growth Using a Membrane-Assisted Semi-Closed Reactor
US 08663389 B2, March 4, 2014, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Andrew Peter Clarke
A membrane-assisted semi-closed reactor for continuously fabricating…

Metal Heterocyclic Compounds for Deposition of Thin Films
US 08636845 B2, Jan. 28, 2014, Using an organic precursor, Julien Gatineau et al. / L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (Paris, FR)
A method of forming a metal containing film on a substrate, comprising:…

Method for Producing Semiconductor Wafers Composed of Silicon With Reduced Pinholes
US 08628613 B2, Jan. 14, 2014, With liquid flow control or manipulation during growth, Werner Schachinger et al. / Siltronic AG (Munich, DE)
A method for producing silicon semiconductor wafers, comprising…

In-Situ Growth of Engineered Defects in Graphene by Epitaxial Reproduction
US 08632633 B2, Jan. 21, 2014, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape, William R. Owens et al. / Raytheon Company (Waltham, US)
A method of forming in-situ engineered defects in graphene, comprising the steps…

Method for Making Zinc Oxide Nano-Structrure
US 08608849 B2, Dec. 17, 2013, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape, Hai-Lin Sun et al. / Tsinghua University (Beijing, CN)
A method for making zinc oxide nano-structure, the method comprising…

Production of a GaN Bulk Crystal Substrate and a Semiconductor Device Formed Thereon
US 08591647 B2, Nov. 26, 2013, Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius, Masahiko Shimada et al. / Ricoh Company, Ltd. (Tokyo, JP)
A method of producing a single crystal body of a group III nitride, comprising…

Growth of Nitride Semiconductor Crystals
US 08529697 B2, Sept. 10, 2013, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Akihiko Horiuchi et al. / Honda Motor Co., Ltd. (Tokyo, JP)
A process for growing a crystal of a nitride semiconductor which comprises:…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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