Featured patents

Method of Semiconductor Nanocrystal Synthesis
US 08834628 B2, Sept. 16, 2014, Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius, Joseph Treadway et al. / Life Technologies Corporation (Carlsbad, US)
A method of producing nanoparticles comprising:…

Method for Growing Silicon Carbide Single Crystal
US 08685163 B2, April 1, 2014, Liquid phase epitaxial growth (LPE), Yukio Terashima et al. / Toyota Jidosha Kabushiki Kaisha (Toyota-shi, Aichi-ken, JP)
A method for growing a silicon carbide single crystal on a single crystal…

Method of Manufacturing Single Crystal Wire and Other Single Crystal Metallic Articles
US 08663388 B2, March 4, 2014, Havin growth from molten state, Se Young Jeong et al. / Korea Electrotechnology Research Institute KR
A method for manufacturing a conductive single crystal wire, comprising the steps…

Crystal Grower With Integrated Litz Coil
US 08673072 B2, March 18, 2014, Having pulling during growth, Donald H. Wiseman / ABP Induction, LLC (North Brunswick, US)
A crystal growing apparatus comprising:…

Method and Device for Slicing a Shaped Silicon Ingot Using Layer Transfer
US 08623137 B1, Jan. 7, 2014, With pretreatment of epitaxy substrate, Francois J. Henley / Silicon Genesis Corporation (San Jose, US)
A method for slicing a shaped silicon ingot, the method comprising:…

Method of Manufacturing a Semiconductor Device
US 08597427 B2, Dec. 3, 2013, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Satoru Okamoto / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A method of manufacturing a semiconductor device, comprising:…

Silica Glass Crucible for Pulling Up Silicon Single Crystal and Method for Manufacturing Thereof
US 08562739 B2, Oct. 22, 2013, Apparatus, Kazuhiro Harada et al. / Japan Super Quartz Corporation (Akita, JP)
A silica glass crucible used for pulling up a silicon single crystal and made…

Growth of Nitride Semiconductor Crystals
US 08529697 B2, Sept. 10, 2013, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Akihiko Horiuchi et al. / Honda Motor Co., Ltd. (Tokyo, JP)
A process for growing a crystal of a nitride semiconductor which comprises:…

Silicon Single Crystal Pull-Up Apparatus Having a Sliding Sample Tube
US 08518180 B2, Aug. 27, 2013, Including details of means providing product movement, Fukuo Ogawa et al. / Sumco Techxiv Corporation (Nagasaki, JP)
A silicon single crystal pull-up apparatus that pulls a doped silicon single…

Method of Controlling a Thickness of a Sheet Formed From a Melt
US 08475591 B2, July 2, 2013, Defines a flat product, Fredrick Carlson et al. / Varian Semiconductor Equipment Associates, Inc. (Gloucester, US)
A method of forming a sheet from a material comprising at least one of silicon…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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