Featured patents

Apparatus and Method for Producing Single Crystals
US 08764900 B2, July 1, 2014, With responsive control, Ryoji Hoshi et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A method for producing single crystals according to a Czochralski method,…

Low Dislocation Density III-V Nitride Substrate Including Filled Pits and Process for Making the Same
US 08728236 B2, May 20, 2014, With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms, Robert P. Vaudo et al. / Cree, Inc. (Durham, US)
A single crystal III-V nitride material having a large area of greater than 2…

Method for Manufacturing a Group III Nitride Semiconductor Crystal and Method for Manufacturing a Group III Nitride Semiconductor Substrate
US 08715413 B2, May 6, 2014, Including change in a growth-influencing parameter during growth, Yuichi Oshima / Hitachi Cable, Ltd. (Tokyo, JP)
A method for manufacturing a group III nitride semiconductor crystal, the method…

Method for Metal-Free Synthesis of Epitaxial Semiconductor Nanowires on Si
US 08691011 B2, April 8, 2014, With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms, Werner Seifert et al. / QuNano AB (Lund, SE)
A method of producing nanostructured devices comprising nanowires epitaxially…

Arrangement and Method for Manufacturing a Crystal From a Melt of a Raw Material and Single Crystal
US 08652253 B2, Feb. 18, 2014, Processes of Growth From Liquid or Supercritical State, Stefan Eichler et al. / Freiberger Compound Materials GmbH (Freiberg, DE)
Arrangement for manufacturing a crystal from the melt of a raw material,…

Oxygen Engineered Single-Crystal REO Template
US 08636844 B1, Jan. 28, 2014, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Michael Lebby et al. / Translucent, Inc. (Palo Alto, US)
A method of forming a template on a silicon substrate for the growth of a single…

Line Scan Sequential Lateral Solidification of Thin Films
US 08617313 B2, Dec. 31, 2013, With responsive control means, Paul C. Van Der Wilt et al. / The Trustees of Columbia University in the City of New York (New York, US)
A system for preparing a semiconductor film for an active matrix display,…

Method and Apparatus for Fast and Local Anneal of Anti-Ferromagnetic (AF) Exchange-Biased Magnetic Stacks
US 08470092 B2, June 25, 2013, Apparatus, Philip Trouilloud et al. / International Business Machines Corporation (Armonk, US)
An apparatus, comprising:…

Ammonothermal Method for Growth of Bulk Gallium Nitride
US 08465588 B2, June 18, 2013, With a chemical reaction (except ionization) in a disparate zone to form a precursor, Derrick S. Kamber et al. / SORAA, Inc. (Fremont, US)
A method of fabricating crystalline material comprising:…

Method and an Apparatus for Growing a Silicon Single Crystal From a Melt
US 08460462 B2, June 11, 2013, Having pulling during growth, Piotr Filar / Siltronic AG (Munich, DE)
A method for growing a silicon single crystal from a melt, comprising…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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