Featured patents

Method for Manufacturing a Polycrystalline Silicon Thin Film by Joule-Heating Induced Crystallization
US 08840720 B2, Sept. 23, 2014, Of amorphous precursor, Cheol-Su Kim / Samsung Display Co., Ltd. (Yongin, Gyeonggi-Do, KR)
A method of manufacturing a polycrystalline silicon thin film, the method…

High Temperature Furnace Insulation
US 08821634 B2, Sept. 2, 2014, Growth confined by a solid member other than seed or product, Menahem Lowy et al. / GTAT Corporation (Merrimack, US)
A method for producing a crystalline ingot in a furnace comprising a furnace…

Method for Evaluating Metal Contamination of Silicon Single Crystal
US 08801854 B2, Aug. 12, 2014, With a step of measuring, testing, or sensing, Shunji Kuragaki / Sumco Corporation (Tokyo, JP)
A method for evaluating metal contamination of a silicon single crystal grown by…

Apparatus and Method for Producing Single Crystals
US 08764900 B2, July 1, 2014, With responsive control, Ryoji Hoshi et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A method for producing single crystals according to a Czochralski method,…

Method and an Apparatus for Growing a Silicon Single Crystal From a Melt
US 08679251 B2, March 25, 2014, Including heating or cooling details, Piotr Filar / Siltronic AG (Munich, DE)
An apparatus for growing a silicon single crystal from a melt, comprising:…

Method and Apparatus for Crystal Growth Using a Membrane-Assisted Semi-Closed Reactor
US 08663389 B2, March 4, 2014, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Andrew Peter Clarke
A membrane-assisted semi-closed reactor for continuously fabricating…

Methods for Purifying Metallurgical Silicon
US 08673073 B2, March 18, 2014, Precursor composition intentionally different from product, Masahiro Hoshino et al.
A method for purifying silicon bearing materials for photovoltaic applications,…

Reactor Designs for Use in Ammonothermal Growth of Group-III Nitride Crystals
US 08641823 B2, Feb. 4, 2014, Including pressurized crystallization means, Siddha Pimputkar et al. / The Regents of the University of California (Oakland, US)
An apparatus for growing crystals, comprising:…

Methods and Apparatus for Manufacturing Monocrystalline Cast Silicon and Monocrystalline Cast Silicon Bodies for Photovoltaics
US 08628614 B2, Jan. 14, 2014, Growth confined by a solid member other than seed or product, Nathan G. Stoddard / AMG IdealCast Solar Corporation (Wayne, US)
A method of manufacturing cast silicon, comprising:…

GaN-crystal Free-Standing Substrate and Method for Producing the Same
US 08574364 B2, Nov. 5, 2013, Forming From Vapor or Gaseous State, Takuji Okahisa et al. / Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
A GaN-crystal free-standing substrate comprising…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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