Featured patents

Semiconductor Single Crystal Production Device and Producing Method Therefor
US 08753446 B2, June 17, 2014, Including a sectioned crucible, Tetsuhiro IIda et al. / Sumco Techxiv Kabushiki Kaisha (Kanagawa, JP)
A semiconductor single crystal production device including a chamber…

Method for Growing Silicon Carbide Single Crystal
US 08685163 B2, April 1, 2014, Liquid phase epitaxial growth (LPE), Yukio Terashima et al. / Toyota Jidosha Kabushiki Kaisha (Toyota-shi, Aichi-ken, JP)
A method for growing a silicon carbide single crystal on a single crystal…

Controlled Gravity Feeding Czochralski Apparatus With on the Way Melting Raw Material
US 08652257 B2, Feb. 18, 2014, Including details of precursor replenishment, Vladimir Ilya Zheleznyak et al.
An apparatus for continuously growing single crystals from a melted raw material,…

Asymmetrical Wafer Configurations and Method for Creating the Same
US 08623136 B1, Jan. 7, 2014, Processes of Growth With a Subsequent Step Acting on the Crystal to Adjust the Impurity Amount, Michael W. Matthews et al. / Rubicon Technology, Inc. (Franklin Park, US)
A method of making a substantially thin rigid annular wafer, comprising the steps…

Method for Evaluating Oxide Dielectric Breakdown Voltage of a Silicon Single Crystal Wafer
US 08551246 B2, Oct. 8, 2013, With a step of measuring, testing, or sensing, Takatoshi Nagoya et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A method for manufacturing a silicon single crystal wafer, comprising at least:…

Generating a Pumping Force in a Silicon Melt by Applying a Time-Varying Magnetic Field
US 08551247 B2, Oct. 8, 2013, Using a magnetic field, Hariprasad Sreedharamurthy et al. / MEMC Electronic Materials, Inc. (St. Peters, US)
A method for applying a time-varying magnetic field to counteract a buoyancy…

Method and Apparatus for Forming Colloidal Photonic Crystals
US 08506703 B2, Aug. 13, 2013, Organic product, Mi-jeong Song et al. / Samsung Display Co., Ltd. KR
A method of forming colloidal photonic crystals, the method comprising:…

Kyropoulos Sapphire Single Crystal Growing Apparatus Using Elliptic Crucible
US 08500905 B2, Aug. 6, 2013, Including heating or cooling details, Jong Kwan Park / DK Aztec Co., Ltd. (Ansung, KR)
A Kyropoulos sapphire single crystal growing apparatus using an elliptic…

Device for Pulling a Single Crystal
US 08470093 B2, June 25, 2013, Including details of means providing product movement, Johann-Andreas Huber et al. / Siltronic AG (Munich, DE)
A device for pulling a single crystal from a melt having a widened portion…

System and Method for Liquid Silicon Containment
US 08449674 B2, May 28, 2013, Havin growth from molten state, Roger F. Clark et al. / AMG Idealcast Solar Corporation (Frederick, US)
A containment apparatus suitable for use in producing high purity silicon,…

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