Featured patents

Rhombohedral Fluoroberyllium Borate Crystals and Hydrothermal Growth Thereof for Use in Laser and Non-Linear Optical Applications and Devices
US 08834629 B2, Sept. 16, 2014, Quartz (SiO2) product, Joseph W Kolis et al. / Clemson University (Clemson, US)
A rhombohedral fluoroberyllium borate crystal belonging to the R32 space group…

Method of Manufacturing Sapphire Seed and Method of Manufacturing Sapphire Single Crystal
US 08828139 B2, Sept. 9, 2014, With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending, Masato Imai et al. / Sumco Corporation (Tokyo, JP)
A method of manufacturing a sapphire seed formed by a sapphire single crystal…

Silicon Substrate and Manufacturing Method of the Same
US 08864907 B2, Oct. 21, 2014, With a step of measuring, testing, or sensing, Shuichi Omote et al. / Sumco Corporation (Tokyo, JP)
A manufacturing method of a silicon substrate which is manufactured…

Multi-Piece Ceramic Crucible and Method for Making Thereof
US 08747554 B2, June 10, 2014, Apparatus, Marc Schaepkens et al. / Momentive Performance Materials Inc. (Waterford, US)
A crucible for making crystals of a semiconductor material, the crucible…

Manufacturing Method for Three-Dimensional GaN Epitaxial Structure
US 08728235 B2, May 20, 2014, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape, I-Kai Lo et al. / National Sun Yat-Sen University (Kaohsiung, TW)
A manufacturing method for three-dimensional GaN epitaxial structure comprising:…

Method of Manufacturing Zinc Oxide Nanowires
US 08691012 B2, April 8, 2014, With pretreatment or preparation of a base, Jae Eun Jang et al. / Samsung Electronics Co. Ltd. KR
A method of manufacturing zinc oxide nanowires comprising:…

Growth of Planar Non-Polar {1 -1 0 0} M-Plane and Semi-Polar {1 1 -2 2} Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
US 08673074 B2, March 18, 2014, Characterized by specified crystallography or arrangement of substrate, Oleg Kovalenkov et al. / Ostendo Technologies, Inc. (Carlsbad, US)
A method of growing planar semi-polar Gallium-Nitride epitaxial film, comprising:…

Silica Glass Crucible for Pulling Up Silicon Single Crystal and Method for Manufacturing Thereof
US 08562739 B2, Oct. 22, 2013, Apparatus, Kazuhiro Harada et al. / Japan Super Quartz Corporation (Akita, JP)
A silica glass crucible used for pulling up a silicon single crystal and made…

Apparatus for Directional Solidification of Silicon Including a Refractory Material
US 08562740 B2, Oct. 22, 2013, For crystallization from liquid or supercritical state, Scott Nichol et al. / Silicor Materials Inc. (Palo Alto, US)
An apparatus for directional solidification of silicon, comprising:…

Method of Growing Zinc-Oxide-Based Semiconductor and Method of Manufacturing Semiconductor Light Emitting Device
US 08529699 B2, Sept. 10, 2013, With pretreatment or preparation of a base, Naochika Horio et al. / Stanley Electric Co., Ltd. (Tokyo, JP)
A method of growing a zinc-oxide-based semiconductor layer on a substrate by…

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