Featured patents

Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same
US 08795431 B2, Aug. 5, 2014, Forming From Vapor or Gaseous State, Takayuki Hirao et al. / NGK Insulators, Ltd. (Aichi-prefeccture, JP)
A method of producing a gallium nitride layer using a seed crystal substrate by…

Systems and Methods for Creating Crystallographic-Orientation Controlled Poly-Silicon Films
US 08734584 B2, May 27, 2014, With means for measuring, testing, or sensing, James S. Im et al. / The Trustees of Columbia University in the City of New York (New York, US)
A system for processing a film on a substrate, comprising:…

Methods for Manufacturing Monocrystalline or Near-Monocrystalline Cast Materials
US 08709154 B2, April 29, 2014, Growth confined by a solid member other than seed or product, Nathan G. Stoddard / AMG IdealCast Solar Corporation (Wayne, US)
A method of casting one or more of a semiconductor, an oxide,…

Crystal Pulling Apparatus and Method for the Production of Heavy Crystals
US 08691009 B2, April 8, 2014, With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending, Burkhard Altekrüger et al. / Siltronic AG DE
A method comprising producing crystals using the Czochralski method wherein…

Manufacturing Apparatus of Polycrystalline Silicon
US 08652256 B2, Feb. 18, 2014, Apparatus, Toshiyuki Ishii et al. / Mitsubishi Materials Corporation (Tokyo, JP)
A manufacturing apparatus of polycrystalline silicon by supplying raw-material…

Crystal Growth Apparatus
US 08623138 B2, Jan. 7, 2014, Apparatus, Hisanori Yamane et al. / Ricoh Company, Ltd. (Tokyo, JP)
A group-III nitride crystal growth apparatus comprising:…

Method for Testing Group III-nitride Wafers and Group III-nitride Wafers With Test Data
US 08557043 B2, Oct. 15, 2013, Characterized by specified crystallography or arrangement of substrate, Edward Letts et al. / SixPoint Materials, Inc. (Buellton, US)
A certified Group III-nitride wafer comprising (i) a documentation of a value…

System and Methods for Growing High-Resistance Single Crystals
US 08512470 B2, Aug. 20, 2013, Precursor composition intentionally different from product, Meng Zhu / China Crystal Technologies Co. Ltd (Beijing, CN)
A method of growing high-resistivity single crystals, comprising:…

Annealing of Single Crystals
US 08470089 B2, June 25, 2013, Processes of Growth From Solid or Gel State, Dominique Richaud et al. / Saint-Gobain Cristaux et Detecteurs (Courbevoie, FR)
Process for manufacturing a single crystal comprising a rare-earth halide, having…

Method of Calculating Carrier Mobility
US 08454748 B2, June 4, 2013, With a step of measuring, testing, or sensing, Motoki Nakashima et al. / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A method for manufacturing an electroluminescent element, comprising the steps…

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