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Semiconductor Single Crystal Production Device and Producing Method Therefor
US 08753446 B2, June 17, 2014, Including a sectioned crucible, Tetsuhiro IIda et al. / Sumco Techxiv Kabushiki Kaisha (Kanagawa, JP)
A semiconductor single crystal production device including a chamber…

Method for Growing Silicon Carbide Single Crystal
US 08702864 B2, April 22, 2014, Havin growth from molten state, Yasuyuki Fujiwara et al. / Toyota Jidosha Kabushiki Kaisha (Toyota-shi, Aichi-ken, JP)
A method for growing a silicon carbide single crystal on a silicon carbide single…

Methods for Purifying Metallurgical Silicon
US 08673073 B2, March 18, 2014, Precursor composition intentionally different from product, Masahiro Hoshino et al.
A method for purifying silicon bearing materials for photovoltaic applications,…

GaN-crystal Free-Standing Substrate and Method for Producing the Same
US 08574364 B2, Nov. 5, 2013, Forming From Vapor or Gaseous State, Takuji Okahisa et al. / Sumitomo Electric Industries, Ltd. (Osaka-shi, Osaka, JP)
A GaN-crystal free-standing substrate comprising…

Methods for Manufacturing Geometric Multi-Crystalline Cast Materials
US 08591649 B2, Nov. 26, 2013, Including vertical precursor-product interface, Nathan G. Stoddard / Advanced Metallurgical Group Idealcast Solar Corp. (Wayne, US)
A method of casting one or more of a semiconductor, an oxide,…

Seed Holder for Crystal Growth Reactors
US 08568531 B2, Oct. 29, 2013, Fully-sealed or vacuum-maintained chamber, Olof Claes Erik Kordina et al. / Pronomic Industry AB (Spanga, SE)
A crystal growth reactor comprising:…

Method for Evaluating Oxide Dielectric Breakdown Voltage of a Silicon Single Crystal Wafer
US 08551246 B2, Oct. 8, 2013, With a step of measuring, testing, or sensing, Takatoshi Nagoya et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A method for manufacturing a silicon single crystal wafer, comprising at least:…

Substrate Surface Modifications for Compositional Gradation of Crystalline Materials and Associated Products
US 08506707 B1, Aug. 13, 2013, Characterized by specified crystallography or arrangement of substrate, Chien-Min Sung
A method of forming a compositionally graded inorganic crystalline material,…

SiC Single Crystal Substrate, SiC Single Crystal Epitaxial Wafer, and SiC Semiconductor Device
US 08470091 B2, June 25, 2013, Characterized by specified crystallography or arrangement of substrate, Kensaku Yamamoto et al. / DENSO CORPORATION (Kariya, JP)
A silicon carbide single crystal epitaxial wafer comprising:…

Method of Calculating Carrier Mobility
US 08454748 B2, June 4, 2013, With a step of measuring, testing, or sensing, Motoki Nakashima et al. / Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken, JP)
A method for manufacturing an electroluminescent element, comprising the steps…

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