Featured patents

Method for Manufacturing a Polycrystalline Silicon Thin Film by Joule-Heating Induced Crystallization
US 08840720 B2, Sept. 23, 2014, Of amorphous precursor, Cheol-Su Kim / Samsung Display Co., Ltd. (Yongin, Gyeonggi-Do, KR)
A method of manufacturing a polycrystalline silicon thin film, the method…

Methods for Producing GaN Nutrient for Ammonothermal Growth
US 08852341 B2, Oct. 7, 2014, With responsive control, Edward Letts et al. / Sixpoint Materials, Inc. (Buellton, US)
A method for producing polycrystalline group III nitride comprising: (a)…

FET Nanopore Sensor
US 08828138 B2, Sept. 9, 2014, Processes of Growth With a Subsequent Step of Heat Treating or Deliberate Controlled Cooling of the Single-Crystal, Christopher D'Emic et al. / International Business Machines Corporation (Armonk, US)
A method of forming a sensor comprising a field effect transistor (FET) sensor…

Substrate Processing Apparatus and Semiconductor Device Producing Method
US 08790463 B2, July 29, 2014, Coating, Atsushi Moriya et al. / Hitachi Kokusai Electric Inc. (Tokyo, JP)
A method of producing a semiconductor device, using a hot wall substrate…

Formation of a Thin Film of Molecular Organic Semiconductor Material
US 08758508 B2, June 24, 2014, Liquid phase epitaxial growth (LPE), Benjamin Grevin et al. / Centre National de la Recherche Scientifique (CNRS) (Paris, FR
A method of forming a thin film in molecular organic semiconductor material…

System and Process for High-Density, Low-Energy Plasma Enhanced Vapor Phase Epitaxy
US 08647434 B2, Feb. 11, 2014, Using an organic precursor, Hans Von Kaenel / Sulzer Metco AG (Wohlen, CH)
A vacuum system for semiconductor epitaxy, the system comprising:…

Abatement of Reaction Gases From Gallium Nitride Deposition
US 08585820 B2, Nov. 19, 2013, Forming From Vapor or Gaseous State, Chantal Arena et al. / Soitec (Bernin, FR)
A method for epitaxial deposition of a Group III-V semiconductor material,…

Substrate Surface Modifications for Compositional Gradation of Crystalline Materials and Associated Products
US 08506707 B1, Aug. 13, 2013, Characterized by specified crystallography or arrangement of substrate, Chien-Min Sung
A method of forming a compositionally graded inorganic crystalline material,…

Modern Hydride Vapor-Phase Epitaxy System and Methods
US 08465587 B2, June 18, 2013, With responsive control, David J. Miller et al. / CBL Technologies, Inc. (Redwood City, US)
A hydride vapor-phase deposition system comprising:…

System and Method for Liquid Silicon Containment
US 08449674 B2, May 28, 2013, Havin growth from molten state, Roger F. Clark et al. / AMG Idealcast Solar Corporation (Frederick, US)
A containment apparatus suitable for use in producing high purity silicon,…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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