Featured patents

Method of Improving Surface Morphology of (Ga,Al,In,B)N Thin Films and Devices Grown on Nonpolar or Semipolar (Ga,Al,In,B)N Substrates
US 08795430 B2, Aug. 5, 2014, Forming From Vapor or Gaseous State, Robert M. Farrell et al. / The Regents of the University of California (Oakland, US)
A method for fabricating III-nitride film, comprising:…

Synthesis of Silicon Nanorods
US 08858707 B2, Oct. 14, 2014, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape, Andrew T. Heitsch et al. / Merck Patent GmbH (Darmstadt, DE)
A method for making silicon nanorods by reacting Au nanocrystals with a silane…

Low Dislocation Density III-V Nitride Substrate Including Filled Pits and Process for Making the Same
US 08728236 B2, May 20, 2014, With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms, Robert P. Vaudo et al. / Cree, Inc. (Durham, US)
A single crystal III-V nitride material having a large area of greater than 2…

Feed Tool for Shielding a Portion of a Crystal Puller
US 08691013 B2, April 8, 2014, Including heating or cooling details, Benjamin Michael Meyer et al. / MEMC Singapore Pte Ltd (Singapore, SG)
A crystal puller for melting silicon and forming a single crystal silicon ingot,…

Crystal Manufacturing
US 08641820 B2, Feb. 4, 2014, Having pulling during growth, Jari Paloheimo et al. / Okmetic Oyj (Vantaa, FI)
A method for a Czochralski crystal growth, wherein said method comprises…

Silicon Single Crystal Wafer for IGBT and Method for Manufacturing Silicon Single Crystal Wafer for IGBT
US 08617311 B2, Dec. 31, 2013, Having pulling during growth, Toshiaki Ono et al. / Sumco Corporation JP
A silicon single crystal wafer for IGBT comprising a silicon single crystal grown…

Floating Semiconductor Foils
US 08603242 B2, Dec. 10, 2013, Growth accompanied by material removal (other than the product) from solution, Uri Cohen et al.
A method for producing a semiconductor foil, said method comprising:…

Manufacturing Method for Silicon Single Crystal
US 08535439 B2, Sept. 17, 2013, Having pulling during growth, Fukuo Ogawa et al. / Sumco Techxiv Corporation (Nagasaki, JP)
A manufacturing method for a silicon single crystal comprising:…

Crystal Growth Crucible Lid
US 08535441 B2, Sept. 17, 2013, Including heating or cooling details, Mark S. Andreaco et al. / Siemens Medical Solutions USA, Inc. (Malvern, US)
A lid for a crystal growth crucible, comprising a plurality of generally arcuate…

Controlling the Emissive Properties of Materials-Improved Lasers and Upconversion Materials
US 08518179 B1, Aug. 27, 2013, Forming From Vapor or Gaseous State, Jeffrey W. Elam et al. / UChicago Argonne, LLC (Chicago, US)
A method for producing a final phase of a crystalline material for use in a fiber…

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