Featured patents

Methods for Producing Improved Crystallinity Group III-nitride Crystals From Initial Group III-nitride Seed by Ammonothermal Growth
US 08728234 B2, May 20, 2014, With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending, Edward Letts et al. / Sixpoint Materials, Inc. (Buellton, US)
A method for growing group III nitride crystals, comprising:…

Manufacturing Method for Three-Dimensional GaN Epitaxial Structure
US 08728235 B2, May 20, 2014, Forming a platelet shape or a small diameter, elongate, generally cylindrical shape, I-Kai Lo et al. / National Sun Yat-Sen University (Kaohsiung, TW)
A manufacturing method for three-dimensional GaN epitaxial structure comprising:…

Method of Manufacturing Silicon Single Crystal, Apparatus for Pulling Silicon Single Crystal and Vitreous Silica Crucible
US 08696813 B2, April 15, 2014, Apparatus, Hideki Watanabe et al. / Japan Super Quartz Corporation (Akita, JP)
A method of manufacturing a silicon single crystal comprising:…

Feed Tool for Shielding a Portion of a Crystal Puller
US 08691013 B2, April 8, 2014, Including heating or cooling details, Benjamin Michael Meyer et al. / MEMC Singapore Pte Ltd (Singapore, SG)
A crystal puller for melting silicon and forming a single crystal silicon ingot,…

Method for Processing Silicon Powder to Obtain Silicon Crystals
US 08685164 B2, April 1, 2014, Including change in a growth-influencing parameter during growth, Scott Nichol / Silicor Materials Inc. (Palo Alto, US)
A process for obtaining silicon crystals from silicon powder, comprising:…

Method and Apparatus for Manufacturing Fused Silica Crucible, and the Fused Silica Crucible
US 08657957 B2, Feb. 25, 2014, Seed pulling, Hiroshi Kishi et al. / Japan Super Quartz Corporation (Akita-Shi, JP)
A method of manufacturing a fused silica crucible by heating and melting…

Procedure for In-Situ Determination of Thermal Gradients at the Crystal Growth Front
US 08673075 B2, March 18, 2014, Seed pulling, Keiichi Takanashi et al. / Sumco Phoenix Corporation (Phoenix, US)
A semiconductor crystal growth apparatus comprising:…

Method for Manufacturing Single Crystal
US 08580032 B2, Nov. 12, 2013, Including change in a growth-influencing parameter during growth, Toshimichi Kubota et al. / Sumco Techxiv Corporation (Nagasaki, JP)
A method of manufacturing a monocrystal, the method comprising:…

Method for Growing Single Crystal of Group III Metal Nitride and Reaction Vessel for Use in Same
US 08568532 B2, Oct. 29, 2013, For crystallization from liquid or supercritical state, Naoya Miyoshi et al. / NGK Insulators, Ltd. (Aichi-prefecture, JP)
A reaction container used for growing a nitride single crystal of a metal…

Silicon Wafer and Method for Producing the Same
US 08460463 B2, June 11, 2013, Comprising a silicon crystal with oxygen containing impurity, Manabu Nishimoto et al. / Sumco Corporation (Tokyo, JP)
A method for producing a silicon wafer for IGBT, comprising:…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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