Featured patents

Method for Manufacturing Single Crystal
US 08852340 B2, Oct. 7, 2014, Having pulling during growth, Toshimichi Kubota et al. / Sumco Techxiv Corporation (Omura-shi)
A method of manufacturing a monocrystal, the method comprising:…

Method of Adjusting Insulation in a Directional Solidification Furnace
US 08784561 B2, July 22, 2014, Having bottom-up crystallization, Benjamin Michael Meyer et al. / MEMC Singapore Pte. Ltd. (UEN200614794D) (Singapore, SG
A method of adjusting the position of insulation in a directional solidification…

Method for Producing Phenol-BPA Adduct Crystals
US 08702863 B2, April 22, 2014, Growth accompanied by material removal (other than the product) from solution, Stephen W. Fetsko / Badger Licensing LLC (Boston, US)
A method of forming phenol-BPA adduct crystals in a crystallizer by evaporative…

Method and an Apparatus for Growing a Silicon Single Crystal From a Melt
US 08679251 B2, March 25, 2014, Including heating or cooling details, Piotr Filar / Siltronic AG (Munich, DE)
An apparatus for growing a silicon single crystal from a melt, comprising:…

Manufacturing Method of Epitaxial Silicon Wafer and Substrate Cleaning Apparatus
US 08696809 B2, April 15, 2014, Having pulling during growth, Kazuaki Kozasa et al. / Sumco Techxiv Corporation (Nagasaki, JP)
A method of manufacturing an epitaxial silicon wafer, the epitaxial silicon wafer…

Low Temperature Continuous Circulation Reactor for the Aqueous Synthesis of ZnO Films, Nanostructures, and Bulk Single Crystals
US 08668774 B2, March 11, 2014, Precursor composition intentionally contains an excess component or a non-product appearing component, MaryAnn E. Lange et al. / The Regents of the University of California (Oakland, US)
A method of fabricating ZnO, comprising:…

Melt Composition for Gallium Nitride Single Crystal Growth and Method for Growing Gallium Nitride Single Crystal
US 08657955 B2, Feb. 25, 2014, Growth confined by a solid member other than seed or product, Shiro Yamasaki et al. / NGK Insulators, Ltd (Nagoya, JP)
A melt composition for growing a gallium nitride single crystal by flux method…

Method and Apparatus for Manufacturing an Ultra Low Defect Semiconductor Single Crystalline Ingot
US 08574362 B2, Nov. 5, 2013, Having pulling during growth, Hong-Woo Lee et al. / Siltron, Inc. (Gumi, KR)
A method for manufacturing an ultra low defect semiconductor single crystalline…

Apparatus for Directional Solidification of Silicon Including a Refractory Material
US 08562740 B2, Oct. 22, 2013, For crystallization from liquid or supercritical state, Scott Nichol et al. / Silicor Materials Inc. (Palo Alto, US)
An apparatus for directional solidification of silicon, comprising:…

Semiconductor Wafer With an Epitaxially Deposited Layer, and Process for Producing the Semiconductor Wafer
US 08449675 B2, May 28, 2013, With pretreatment of substrate, Gerhard Huettl et al. / Siltronic AG (Munich, DE)
A process for producing an epitaxially coated semiconductor wafer with low…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

Narrow down the browsing criteria below to see more patents.

Select a subcategory
Quick navigation
New documents
  • Process for the Production of the Actinobacillus Pleuropneumoniae Toxins APXI or APXIII in a Liquid Culture Medium Under Supply of Air Enriched in Carbon Dioxide
  • Method for Manufacturing Nonvolatile Memory Device
  • Supply Chain Demand Satisfaction
  • Supply-Line Management Device
  • Storage Control Device and Method for Managing Snapshot