Featured patents

Mechanism for Controlling Melt Level in Single Crystal Pulling Apparatus, Method for Controlling Melt Level in Single Crystal Pulling Apparatus, Mechanism for Adjusting Melt Level in Single Crystal Pulling Apparatus and Method for Adjusting Melt Level While Pulling Single Crystal
US 08801853 B2, Aug. 12, 2014, With a step of measuring, testing, or sensing, Keiichi Takanashi / Sumco Corporation JP
A mechanism for controlling an initial melt level in a single crystal pulling…

Formation of a Thin Film of Molecular Organic Semiconductor Material
US 08758508 B2, June 24, 2014, Liquid phase epitaxial growth (LPE), Benjamin Grevin et al. / Centre National de la Recherche Scientifique (CNRS) (Paris, FR
A method of forming a thin film in molecular organic semiconductor material…

Method and Apparatus for Crystal Growth Using a Membrane-Assisted Semi-Closed Reactor
US 08663389 B2, March 4, 2014, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both, Andrew Peter Clarke
A membrane-assisted semi-closed reactor for continuously fabricating…

Crystal Manufacturing
US 08641820 B2, Feb. 4, 2014, Having pulling during growth, Jari Paloheimo et al. / Okmetic Oyj (Vantaa, FI)
A method for a Czochralski crystal growth, wherein said method comprises…

Titanium-Doped Indium Oxide Films
US 08628615 B2, Jan. 14, 2014, Including change in a growth-influencing parameter during growth, Kie Y. Ahn et al. / Micron Technology, Inc. (Boise, US)
A method comprising:…

Asymmetrical Wafer Configurations and Method for Creating the Same
US 08623136 B1, Jan. 7, 2014, Processes of Growth With a Subsequent Step Acting on the Crystal to Adjust the Impurity Amount, Michael W. Matthews et al. / Rubicon Technology, Inc. (Franklin Park, US)
A method of making a substantially thin rigid annular wafer, comprising the steps…

Systems and Methods for Preparation of Epitaxially Textured Thick Films
US 08557040 B2, Oct. 15, 2013, Epitaxy formation, James S. Im / The Trustees of Columbia University in the City of New York (New York, US)
A method for preparing a thick crystalline film, comprising:…

Crystal Growth Crucible Lid
US 08535441 B2, Sept. 17, 2013, Including heating or cooling details, Mark S. Andreaco et al. / Siemens Medical Solutions USA, Inc. (Malvern, US)
A lid for a crystal growth crucible, comprising a plurality of generally arcuate…

Substrate Surface Modifications for Compositional Gradation of Crystalline Materials and Associated Products
US 08506707 B1, Aug. 13, 2013, Characterized by specified crystallography or arrangement of substrate, Chien-Min Sung
A method of forming a compositionally graded inorganic crystalline material,…

Ammonothermal Method for Growth of Bulk Gallium Nitride
US 08465588 B2, June 18, 2013, With a chemical reaction (except ionization) in a disparate zone to form a precursor, Derrick S. Kamber et al. / SORAA, Inc. (Fremont, US)
A method of fabricating crystalline material comprising:…

Patentorg has 240 documents under Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor Patents.

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