Featured patents

Methods for Producing GaN Nutrient for Ammonothermal Growth
US 08852341 B2, Oct. 7, 2014, With responsive control, Edward Letts et al. / Sixpoint Materials, Inc. (Buellton, US)
A method for producing polycrystalline group III nitride comprising: (a)…

Rhombohedral Fluoroberyllium Borate Crystals and Hydrothermal Growth Thereof for Use in Laser and Non-Linear Optical Applications and Devices
US 08834629 B2, Sept. 16, 2014, Quartz (SiO2) product, Joseph W Kolis et al. / Clemson University (Clemson, US)
A rhombohedral fluoroberyllium borate crystal belonging to the R32 space group…

Single-Crystal Manufacturing Apparatus
US 08821636 B2, Sept. 2, 2014, Including details of precursor replenishment, Kouji Mizuishi et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A single-crystal manufacturing apparatus based on the Czochralski method having…

Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates
US 08821635 B2, Sept. 2, 2014, With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms, John Kouvetakis et al. / Arizona Board of Regents on Behalf of Arizona State University (Tempe, US)
A method for depositing an epitaxial Si—Ge layer on a substrate in a reaction…

Single-Crystal Manufacturing Apparatus and Single-Crystal Manufacturing Method
US 08858706 B2, Oct. 14, 2014, Having pulling during growth, Kosei Sugawara et al. / Shin-Etsu Handotai Co., Ltd. (Tokyo, JP)
A single-crystal manufacturing apparatus according to the Czochralski method,…

Silicon Wafer and Method for Manufacturing the Same
US 08758505 B2, June 24, 2014, Processes of Growth With a Subsequent Step Acting on the Crystal to Adjust the Impurity Amount, Toshiaki Ono et al. / Sumitomo Mitsubishi Silicon Corporation (Tokyo, JP)
A method for manufacturing a silicon wafer, comprising:…

Laser-Irradiated Thin Films Having Variable Thickness
US 08715412 B2, May 6, 2014, Of amorphous precursor, James S. Im / The Trustees of Columbia University in the City of New York (New York, US)
A system for processing a film comprising:…

Method and an Apparatus for Growing a Silicon Single Crystal From a Melt
US 08679251 B2, March 25, 2014, Including heating or cooling details, Piotr Filar / Siltronic AG (Munich, DE)
An apparatus for growing a silicon single crystal from a melt, comprising:…

Method for Producing a Single Crystal of Semiconductor Material
US 08580033 B2, Nov. 12, 2013, Including change in a growth-influencing parameter during growth, Joerg Fischer et al. / Siltronic AG (Munich, DE)
A device for producing a single crystal of semiconductor material, comprising…

Method for Continuous Formation of a Purified Sheet From a Melt
US 08545624 B2, Oct. 1, 2013, With responsive control, Peter L. Kellerman et al. / Varian Semiconductor Equipment Associates, Inc. (Gloucester, US)
A method of forming a sheet comprising:…

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